| 产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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BCR22PNH6433 |
50V,100mA,NPN/PNP硅数字晶体管阵列 |
2018-06-13 |
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BAR63-03WE6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR64-04E6327 |
150,100mA,硅PIN二极管 |
2018-06-13 |
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BAR64-06E6327 |
150,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-02LE6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-02VH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-06WH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-05WH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR90-02ELSE6327 |
80V,100mA,硅深沟槽PIN二极管 |
2018-06-13 |
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ESD231-B1-W0201E6327 |
5.5V,3.5pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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ESD130-B1-W0201E6327 |
5.5V,0.3pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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ESD230-B1-W0201E6327 |
5.5V,7pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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IRF8736TRPBF |
30V,4.8mΩ,18A,N沟道功率MOSFET |
2018-06-13 |
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IRFP3710PBF |
100V,25mΩ,57A,N沟道功率MOSFET |
2018-06-13 |
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IRFR024NTRPBF |
55V,75mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRFP064NPBF |
55V,8mΩ,110A,N沟道功率MOSFET |
2018-06-13 |
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IRFP4368PBF |
75V,1.85mΩ,350A,N沟道功率MOSFET |
2018-06-13 |
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IRFB4127PBF |
200V,20mΩ,76A,N沟道功率MOSFET |
2018-06-13 |
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IRFP4227PBF |
200V,25mΩ,65A,N沟道功率MOSFET |
2018-06-13 |
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IRF530NSTRLPBF |
100V,90mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRFP150NPBF |
100V,36mΩ,42A,N沟道功率MOSFET |
2018-06-13 |
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IRLR3410TRPBF |
100V,105mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRLR120NTRPBF |
100V,185mΩ,10A,N沟道功率MOSFET |
2018-06-13 |
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IRLML6344TRPBF |
30V,29mΩ,5A,N沟道功率MOSFET |
2018-06-13 |
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IRF7416TRPBF |
-30V,20mΩ,-10A,P沟道功率MOSFET |
2018-06-13 |
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IRF6216TRPBF |
-150V,240mΩ,-2.2A,P沟道功率MOSFET |
2018-06-13 |
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IRF7309TRPBF |
30V/-30V,4A/3A,N/P沟道功率MOSFET |
2018-06-13 |
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IM512-L6A |
三相交流电机驱动器 |
2018-06-13 |
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IM513-L6A |
三相交流电机驱动器 |
2018-06-13 |
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IRF640NSTRLPBF |
200V,150mΩ,18A,N沟道功率MOSFET |
2018-06-13 |
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IRF7343TRPBF |
55V,-55V,4.7A,-3.4A,N/P沟道功率MOSFET |
2018-06-13 |
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BTT6050-2EKA |
50mΩ通态电阻,双通道,智能高边功率开关 |
2018-05-25 |
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ESD101-B1-02ELSE6327 |
双向超低电容ESD/瞬态保护二极管 |
2018-05-25 |
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BSZ097N10NS5 |
100V,9.7mΩ,40A,N沟道功率MOSFET |
2018-05-10 |
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BSC052N08NS5 |
80V,5.2mΩ,95A,N沟道功率MOSFET |
2018-05-10 |
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ESD5V3U2U-03FH6327 |
2通道，单向，超低电容ESD保护二极管 |
2018-04-28 |
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IDFW40E65D1E |
650V,120A,发射极控制二极管 |
2018-04-28 |
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IPW60R190P6 |
600V,20.2A,N沟道功率MOSFET |
2018-03-21 |
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TLE42744DV33 |
3.3V，400mA低压差固定稳压器 |
2018-03-21 |
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BSP742R |
单通道智能高边功率开关 |
2018-03-08 |
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BTS5020-2EKA |
20mΩ通态电阻，双通道智能高边功率开关 |
2018-02-08 |
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BTS5030-2EKA |
30mΩ通态电阻,双通道,智能高边功率开关 |
2018-02-08 |
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IPA60R380P6 |
600V,380mΩ,10.6A,N沟道功率MOSFET |
2018-02-08 |
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BTS5030-1EJA |
单通道30mΩ,智能高边电源开关 |
2018-02-08 |
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2EDN7524F |
5A快速双通道栅极驱动器 |
2018-02-08 |
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BFR92PE6327 |
15V,45mA,低噪声硅双极射频晶体管 |
2018-02-08 |
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BTN8962TA |
集成大电流P/N沟道半桥驱动器 |
2018-02-08 |
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BTS5090-1EJA |
单通道90mΩ,智能高边电源开关 |
2018-02-08 |
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BTS5180-2EKA |
双通道180mΩ,智能高边电源开关 |
2018-02-08 |
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IPW60R041P6 |
600V,77.5A,N沟道功率MOSFET |
2018-02-01 |
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BSC039N06NS |
60V,6.9mΩ,100A,N沟道功率MOSFET |
2018-02-01 |
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IPW65R019C7 |
650V,19mΩ,75A,N沟道功率MOSFET |
2018-02-01 |
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BGA7H1BN6E6327 |
用于LTE的硅锗低噪声射频放大器 |
2018-02-01 |
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IPP60R190P6 |
650V,57A,N沟道功率MOSFET |
2017-12-15 |
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TLE6250GV33 |
1Mbit/s 高速CAN收发器 |
2017-12-15 |
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TLE6250G |
1Mbit/s 高速CAN收发器 |
2017-12-15 |
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TLE42744DV50 |
5V，400mA低压差固定稳压器 |
2017-12-15 |
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TLE4913 |
低功耗霍尔开关 |
2017-12-15 |
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IPW60R070P6 |
600V,70mΩ,53.5A,N沟道功率MOSFET |
2017-12-15 |
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IPW60R125P6 |
600V,125mΩ,30A,N沟道功率MOSFET |
2017-12-15 |
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TLE4207G |
1A双半桥驱动器 |
2017-12-15 |
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BSS87H6327 |
240V,6000mΩ,0.26A,N沟道小信号MOSFET |
2017-12-01 |
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BSC123N10LSG |
100V,12.3mΩ,71A,N沟道功率MOSFET |
2017-11-09 |
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ICE2QR0665 |
集成650V CoolMOS®和启动单元的离线SMPS准谐振PWM控制器 |
2017-11-09 |
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BSV236SPH6327 |
-20V，-1.5A，P沟道功率MOSFET |
2017-07-19 |
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IPD60R460CE |
600V,9.1A,N沟道功率MOSFET |
2017-07-19 |
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BAT165E6327HTSA1 |
40V,750mA,中功率AF肖特基二极管 |
2017-04-19 |
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