| 产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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IR3555MTRPBF |
驱动器门60A |
2020-09-24 |
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BFP450H6327XTSA1 |
线性低噪声硅双极射频晶体管 |
2020-09-07 |
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TLE4964-2M |
高精度汽车霍尔效应锁存器 |
2020-06-10 |
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IRFZ44VZPBF |
60V，57A，12mΩ，N沟道功率MOSFET |
2020-05-28 |
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IKW50N60DTP |
600V,80A,IGBT 带反并联二极管 |
2020-05-28 |
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SAK-TC212L-8F133NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC212S-8F133SCAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC214L-8F133NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC222L-16F133NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC223L-16F133NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC224L-16F133NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC233LP-32F200NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC234LP-32F200NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC234LX-32F200FAB |
33位TriCore CPU |
2020-05-21 |
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SAK-TC267D-40F200NBC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC275TP-64F200NDC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC297TX-128F300NBC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC299TX-128F300NBC |
32位TriCore CPU |
2020-05-21 |
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IPA70R600P7S |
700V,8.5A,600mΩ,N沟道增强式功率MOSFET |
2019-06-14 |
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IKQ75N120CH3 |
高速开关系列第三代IGBT |
2019-06-14 |
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BTS117TC |
智能低端电源开关 |
2019-06-14 |
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BTS3028SDR |
28mΩ,单通道智能低端电源开关 |
2019-06-14 |
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BTS409L1E3062A |
智能高端电源开关 |
2019-06-14 |
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BTS4142N |
200mΩ,单路智能高端电源开关 |
2019-06-14 |
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BTS428L2 |
60mΩ,单路智能高端电源开关 |
2019-06-14 |
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BTS441RG |
20mΩ,单路智能高端电源开关 |
2019-06-14 |
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BTS50055-1TMA |
6mΩ,单路智能高端大电流电源开关 |
2019-06-14 |
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BTS50055-1TMC |
6mΩ,单路智能高端大电流电源开关 |
2019-06-14 |
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BTS5210G |
2 x 140mΩ,双路智能高端电源开关 |
2019-06-14 |
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BTS5215L |
2 x 90mΩ,双路智能高端电源开关 |
2019-06-14 |
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BTS711L1 |
4 x 200mΩ,四路智能高端电源开关 |
2019-06-14 |
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BTS712N1 |
4 x 200mΩ,四路智能高端电源开关 |
2019-06-14 |
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BTS716G |
4 x 140mΩ,四路智能高端电源开关 |
2019-06-14 |
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BTS716GB |
4 x 140mΩ,四路智能高端电源开关 |
2019-06-14 |
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BTS50085-1TMA |
9mΩ通态电阻,单通道智能高边开关 |
2019-06-14 |
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TLD5097EL |
LED升压控制器 |
2019-06-14 |
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BTS118D |
100mΩ,智能低侧电源开关 |
2019-05-16 |
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BTS133TC |
50mΩ,智能低侧电源开关 |
2019-05-16 |
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BTS4300SGA |
600mΩ,智能高边电源开关 |
2019-05-16 |
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BTS640S2G |
30mΩ,智能感应高侧电源开关 |
2019-05-16 |
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BTS740S2 |
30mΩ,智能高侧电源开关 |
2019-05-16 |
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BTT6030-2EKA |
32mΩ,智能双通道高侧电源开关 |
2019-05-16 |
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BCR320UE6327 |
25V,LED照明驱动器 |
2019-05-16 |
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BCR421UE6327 |
4.5V,LED照明驱动器 |
2019-05-16 |
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BGA616H6327 |
4.5V,硅锗宽带MMIC射频放大器 |
2019-05-16 |
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BAS40E6327 |
40V,碳化硅肖特基二极管 |
2019-05-16 |
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BAT15-04WH6327 |
4V,碳化硅肖特基二极管 |
2019-05-16 |
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BAT64-02VH6327 |
40V,碳化硅肖特基二极管 |
2019-05-16 |
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BBY57-02VH6327 |
10V,硅调谐二极管 |
2019-05-16 |
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BFP640H6327 |
4.1V,低噪声硅锗双极射频晶体管 |
2019-05-16 |
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BFR106E6327 |
16V,低噪声硅双极射频晶体管 |
2019-05-16 |
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BFS17PE6327 |
15V,NPN硅双极射频晶体管 |
2019-05-16 |
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BFS17WH6327 |
15V,NPN硅双极射频晶体管 |
2019-05-16 |
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IPG20N06S2L-35 |
55V,20A,35mΩ,N沟道增强模式功率MOSFET |
2019-05-16 |
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BTS436L2G |
38mΩ,智能高边电源开关 |
2019-05-16 |
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BTS50055-1TMB |
6mΩ,智能高边大电流电源开关 |
2019-05-16 |
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BTS611L1E3128A |
200mΩ,智能双通道高侧电源开关 |
2019-05-16 |
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BCR405UE6327 |
40V,LED照明驱动器 |
2019-05-16 |
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BAT63-02VH6327 |
3V,碳化硅肖特基二极管 |
2019-05-16 |
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BFQ19SH6327 |
15V,低噪声硅双极射频晶体管 |
2019-05-16 |
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BFR93AE6327 |
12V,低噪声硅双极射频晶体管 |
2019-05-16 |
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IPA60R180P7S |
600V,18A,180mΩ,N沟道增强模型功率MOSFET |
2019-05-16 |
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IPA70R360P7S |
700V,12.5A,360mΩ,N沟道增强式功率MOSFET |
2019-05-16 |
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IPW60R060P7 |
600V,48A,60mΩ,N沟道增强模式功率MOSFET |
2019-05-16 |
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BSC160N15NS5 |
150V,16mΩ,56A,N沟道功率MOSFET |
2019-02-26 |
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BAR64-02ELE6327 |
150V,100mA,硅PIN二极管 |
2018-11-22 |
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IRF8707TRPBF |
30V,11.9mΩ,11A,N沟道功率MOSFET |
2018-11-22 |
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IRF2907ZPBF |
75V,4.5mΩ,160A,N沟道功率MOSFET |
2018-11-22 |
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IRF5305PBF |
-55V,60mΩ,-31A,P沟道功率MOSFET |
2018-11-01 |
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IRF2807PBF |
70V,13mΩ,82A,N沟道功率MOSFET |
2018-09-21 |
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IRLR8743TRPBF |
30V,3.1mΩ,160A,N沟道功率MOSFET |
2018-09-21 |
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IRLML0030TRPBF |
30V,40mΩ,5.3A,N沟道功率MOSFET |
2018-09-21 |
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IRFB52N15DPBF |
150V,32mΩ,51A,N沟道功率MOSFET |
2018-09-21 |
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IRLML2803TRPBF |
30V,250mΩ,1.2A,N沟道功率MOSFET |
2018-09-21 |
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IRFR9120NTRPBF |
-100V,480mΩ,-6.6A,P沟道功率MOSFET |
2018-09-21 |
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IRF5305STRLPBF |
-55V,60mΩ,-31A,P沟道功率MOSFET |
2018-09-21 |
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IRLML5103TRPBF |
-30V,600mΩ,-0.76A,P沟道功率MOSFET |
2018-09-21 |
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IHW30N120R3 |
1200V,30A,反向导通IGBT |
2018-09-21 |
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IRF7103TRPBF |
50V,130mΩ,3A,N沟道功率MOSFET |
2018-08-23 |
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IRLZ44NPBF |
55V,22mΩ,47A,N沟道功率MOSFET |
2018-08-23 |
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IRLZ34NPBF |
55V,35mΩ,30A,N沟道功率MOSFET |
2018-08-23 |
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IRLL2705TRPBF |
55V,40mΩ,3.8A,N沟道功率MOSFET |
2018-08-23 |
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IRFB5615PBF |
150V,39mΩ,35A,N沟道功率MOSFET |
2018-08-23 |
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IRF7303TRPBF |
30V,50mΩ,5.3A,N沟道功率MOSFET |
2018-08-23 |
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IRFP3206PBF |
60V,3mΩ,200A,N沟道功率MOSFET |
2018-08-23 |
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IRFB7537PBF |
60V,3.3mΩ,173A,N沟道功率MOSFET |
2018-07-31 |
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IRF5210STRLPBF |
-100V,60mΩ,-38A,P沟道功率MOSFET |
2018-07-31 |
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IRFR5410TRPBF |
-100V,205mΩ,-13A,P沟道功率MOSFET |
2018-07-31 |
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IRF5210PBF |
-100V,60mΩ,-40A,P沟道功率MOSFET |
2018-07-31 |
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IRFR5305TRLPBF |
-55V,65mΩ,-31A,P沟道功率MOSFET |
2018-07-31 |
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IRFR5505TRPBF |
-55V,110mΩ,-18A,P沟道功率MOSFET |
2018-07-31 |
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IRFR3710ZTRPBF |
100V,18mΩ,42A,N沟道功率MOSFET |
2018-07-12 |
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IRFZ44NPBF |
55V,17.5mΩ,49A,N沟道功率MOSFET |
2018-07-12 |
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IRLL024NTRPBF |
55V,65mΩ,3.1A,N沟道功率MOSFET |
2018-07-12 |
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IRF1010EPBF |
60V,12mΩ,84A,N沟道功率MOSFET |
2018-07-12 |
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IRFP2907PBF |
75V,4.5mΩ,209A,N沟道功率MOSFET |
2018-07-12 |
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IRF8714TRPBF |
30V,8.7mΩ,14A,N沟道功率MOSFET |
2018-07-12 |
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IRFR5305TRPBF |
-55V,65mΩ,-31A,P沟道功率MOSFET |
2018-07-12 |
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TDA5210 |
ASK/FSK单转换接收器 |
2018-06-25 |
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BAR63-03WE6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR64-04E6327 |
150,100mA,硅PIN二极管 |
2018-06-13 |
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BAR64-06E6327 |
150,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-02VH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-06WH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR90-02ELSE6327 |
80V,100mA,硅深沟槽PIN二极管 |
2018-06-13 |
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ESD231-B1-W0201E6327 |
5.5V,3.5pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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ESD230-B1-W0201E6327 |
5.5V,7pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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IRF8736TRPBF |
30V,4.8mΩ,18A,N沟道功率MOSFET |
2018-06-13 |
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IRFP3710PBF |
100V,25mΩ,57A,N沟道功率MOSFET |
2018-06-13 |
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IRFR024NTRPBF |
55V,75mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRFP064NPBF |
55V,8mΩ,110A,N沟道功率MOSFET |
2018-06-13 |
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IRFP4368PBF |
75V,1.85mΩ,350A,N沟道功率MOSFET |
2018-06-13 |
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IRFB4127PBF |
200V,20mΩ,76A,N沟道功率MOSFET |
2018-06-13 |
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IRFP4227PBF |
200V,25mΩ,65A,N沟道功率MOSFET |
2018-06-13 |
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IRF530NSTRLPBF |
100V,90mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRFP150NPBF |
100V,36mΩ,42A,N沟道功率MOSFET |
2018-06-13 |
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IRLR120NTRPBF |
100V,185mΩ,10A,N沟道功率MOSFET |
2018-06-13 |
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IRF7309TRPBF |
30V/-30V,4A/3A,N/P沟道功率MOSFET |
2018-06-13 |
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IM513-L6A |
三相交流电机驱动器 |
2018-06-13 |
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IRF640NSTRLPBF |
200V,150mΩ,18A,N沟道功率MOSFET |
2018-06-13 |
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IRF7343TRPBF |
55V,-55V,4.7A,-3.4A,N/P沟道功率MOSFET |
2018-06-13 |
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ESD101-B1-02ELSE6327 |
双向超低电容ESD/瞬态保护二极管 |
2018-05-25 |
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ESD5V3U2U-03FH6327 |
2通道，单向，超低电容ESD保护二极管 |
2018-04-28 |
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IDFW40E65D1E |
650V,120A,发射极控制二极管 |
2018-04-28 |
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IPW60R190P6 |
600V,20.2A,N沟道功率MOSFET |
2018-03-21 |
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BTS5020-2EKA |
20mΩ通态电阻，双通道智能高边功率开关 |
2018-02-08 |
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BTS5030-2EKA |
30mΩ通态电阻,双通道,智能高边功率开关 |
2018-02-08 |
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IPA60R380P6 |
600V,380mΩ,10.6A,N沟道功率MOSFET |
2018-02-08 |
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BTS5030-1EJA |
单通道30mΩ,智能高边电源开关 |
2018-02-08 |
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2EDN7524F |
5A快速双通道栅极驱动器 |
2018-02-08 |
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BFR92PE6327 |
15V,45mA,低噪声硅双极射频晶体管 |
2018-02-08 |
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BTN8962TA |
集成大电流P/N沟道半桥驱动器 |
2018-02-08 |
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BTS5090-1EJA |
单通道90mΩ,智能高边电源开关 |
2018-02-08 |
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BTS5180-2EKA |
双通道180mΩ,智能高边电源开关 |
2018-02-08 |
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IPW60R041P6 |
600V,77.5A,N沟道功率MOSFET |
2018-02-01 |
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BSC039N06NS |
60V,6.9mΩ,100A,N沟道功率MOSFET |
2018-02-01 |
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BGA7H1BN6E6327 |
用于LTE的硅锗低噪声射频放大器 |
2018-02-01 |
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TLE6250GV33 |
1Mbit/s 高速CAN收发器 |
2017-12-15 |
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TLE6250G |
1Mbit/s 高速CAN收发器 |
2017-12-15 |
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TLE42744DV50 |
5V，400mA低压差固定稳压器 |
2017-12-15 |
|
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IPW60R070P6 |
600V,70mΩ,53.5A,N沟道功率MOSFET |
2017-12-15 |
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TLE4207G |
1A双半桥驱动器 |
2017-12-15 |
|
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BSC123N10LSG |
100V,12.3mΩ,71A,N沟道功率MOSFET |
2017-11-09 |
|
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ICE2QR0665 |
集成650V CoolMOS®和启动单元的离线SMPS准谐振PWM控制器 |
2017-11-09 |
|
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BSV236SPH6327 |
-20V，-1.5A，P沟道功率MOSFET |
2017-07-19 |
|
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IPD60R460CE |
600V,9.1A,N沟道功率MOSFET |
2017-07-19 |
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