| 产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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TLE4964-2M |
高精度汽车霍尔效应锁存器 |
2020-06-10 |
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IRFZ44VZPBF |
60V，57A，12mΩ，N沟道功率MOSFET |
2020-05-28 |
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IKW50N60DTP |
600V,80A,IGBT 带反并联二极管 |
2020-05-28 |
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SAK-TC212L-8F133NAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC212S-8F133SCAC |
32位TriCore CPU |
2020-05-21 |
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SAK-TC267D-40F200NBC |
32位TriCore CPU |
2020-05-21 |
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IPA70R600P7S |
700V,8.5A,600mΩ,N沟道增强式功率MOSFET |
2019-06-14 |
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BTS3028SDR |
28mΩ,单通道智能低端电源开关 |
2019-06-14 |
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BTS409L1E3062A |
智能高端电源开关 |
2019-06-14 |
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BTS428L2 |
60mΩ,单路智能高端电源开关 |
2019-06-14 |
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BTS711L1 |
4 x 200mΩ,四路智能高端电源开关 |
2019-06-14 |
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BTS712N1 |
4 x 200mΩ,四路智能高端电源开关 |
2019-06-14 |
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BTS716GB |
4 x 140mΩ,四路智能高端电源开关 |
2019-06-14 |
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TLD5097EL |
LED升压控制器 |
2019-06-14 |
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BTS640S2G |
30mΩ,智能感应高侧电源开关 |
2019-05-16 |
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BCR421UE6327 |
4.5V,LED照明驱动器 |
2019-05-16 |
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BGA616H6327 |
4.5V,硅锗宽带MMIC射频放大器 |
2019-05-16 |
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BAS40E6327 |
40V,碳化硅肖特基二极管 |
2019-05-16 |
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BAT15-04WH6327 |
4V,碳化硅肖特基二极管 |
2019-05-16 |
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BAT64-02VH6327 |
40V,碳化硅肖特基二极管 |
2019-05-16 |
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BBY57-02VH6327 |
10V,硅调谐二极管 |
2019-05-16 |
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BFP640H6327 |
4.1V,低噪声硅锗双极射频晶体管 |
2019-05-16 |
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BFR106E6327 |
16V,低噪声硅双极射频晶体管 |
2019-05-16 |
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BFS17WH6327 |
15V,NPN硅双极射频晶体管 |
2019-05-16 |
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BTS436L2G |
38mΩ,智能高边电源开关 |
2019-05-16 |
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BTS611L1E3128A |
200mΩ,智能双通道高侧电源开关 |
2019-05-16 |
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BCR405UE6327 |
40V,LED照明驱动器 |
2019-05-16 |
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BAT63-02VH6327 |
3V,碳化硅肖特基二极管 |
2019-05-16 |
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BFR93AE6327 |
12V,低噪声硅双极射频晶体管 |
2019-05-16 |
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IPA70R360P7S |
700V,12.5A,360mΩ,N沟道增强式功率MOSFET |
2019-05-16 |
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IPW60R060P7 |
600V,48A,60mΩ,N沟道增强模式功率MOSFET |
2019-05-16 |
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BSC160N15NS5 |
150V,16mΩ,56A,N沟道功率MOSFET |
2019-02-26 |
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BAR64-02ELE6327 |
150V,100mA,硅PIN二极管 |
2018-11-22 |
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IRF8707TRPBF |
30V,11.9mΩ,11A,N沟道功率MOSFET |
2018-11-22 |
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IRF2807PBF |
70V,13mΩ,82A,N沟道功率MOSFET |
2018-09-21 |
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IRLR8743TRPBF |
30V,3.1mΩ,160A,N沟道功率MOSFET |
2018-09-21 |
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IRFB52N15DPBF |
150V,32mΩ,51A,N沟道功率MOSFET |
2018-09-21 |
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IRF5305STRLPBF |
-55V,60mΩ,-31A,P沟道功率MOSFET |
2018-09-21 |
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IHW30N120R3 |
1200V,30A,反向导通IGBT |
2018-09-21 |
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IRLZ34NPBF |
55V,35mΩ,30A,N沟道功率MOSFET |
2018-08-23 |
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IRLL2705TRPBF |
55V,40mΩ,3.8A,N沟道功率MOSFET |
2018-08-23 |
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IRFP3206PBF |
60V,3mΩ,200A,N沟道功率MOSFET |
2018-08-23 |
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IRFB7537PBF |
60V,3.3mΩ,173A,N沟道功率MOSFET |
2018-07-31 |
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IRF5210PBF |
-100V,60mΩ,-40A,P沟道功率MOSFET |
2018-07-31 |
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IRFR5305TRLPBF |
-55V,65mΩ,-31A,P沟道功率MOSFET |
2018-07-31 |
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IRFR5505TRPBF |
-55V,110mΩ,-18A,P沟道功率MOSFET |
2018-07-31 |
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IRFZ44NPBF |
55V,17.5mΩ,49A,N沟道功率MOSFET |
2018-07-12 |
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IRF1010EPBF |
60V,12mΩ,84A,N沟道功率MOSFET |
2018-07-12 |
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IRF8714TRPBF |
30V,8.7mΩ,14A,N沟道功率MOSFET |
2018-07-12 |
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IRFR5305TRPBF |
-55V,65mΩ,-31A,P沟道功率MOSFET |
2018-07-12 |
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BAR63-03WE6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR64-04E6327 |
150,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-02VH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR63-06WH6327 |
50,100mA,硅PIN二极管 |
2018-06-13 |
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BAR90-02ELSE6327 |
80V,100mA,硅深沟槽PIN二极管 |
2018-06-13 |
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ESD231-B1-W0201E6327 |
5.5V,3.5pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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ESD230-B1-W0201E6327 |
5.5V,7pF,0201,单向ESD/瞬态保护二极管 |
2018-06-13 |
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IRF8736TRPBF |
30V,4.8mΩ,18A,N沟道功率MOSFET |
2018-06-13 |
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IRFP3710PBF |
100V,25mΩ,57A,N沟道功率MOSFET |
2018-06-13 |
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IRFR024NTRPBF |
55V,75mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRFP064NPBF |
55V,8mΩ,110A,N沟道功率MOSFET |
2018-06-13 |
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IRFP4368PBF |
75V,1.85mΩ,350A,N沟道功率MOSFET |
2018-06-13 |
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IRF530NSTRLPBF |
100V,90mΩ,17A,N沟道功率MOSFET |
2018-06-13 |
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IRFP150NPBF |
100V,36mΩ,42A,N沟道功率MOSFET |
2018-06-13 |
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IRF7309TRPBF |
30V/-30V,4A/3A,N/P沟道功率MOSFET |
2018-06-13 |
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IM513-L6A |
三相交流电机驱动器 |
2018-06-13 |
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ESD101-B1-02ELSE6327 |
双向超低电容ESD/瞬态保护二极管 |
2018-05-25 |
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ESD5V3U2U-03FH6327 |
2通道，单向，超低电容ESD保护二极管 |
2018-04-28 |
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IDFW40E65D1E |
650V,120A,发射极控制二极管 |
2018-04-28 |
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IPW60R190P6 |
600V,20.2A,N沟道功率MOSFET |
2018-03-21 |
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IPA60R380P6 |
600V,380mΩ,10.6A,N沟道功率MOSFET |
2018-02-08 |
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IPW60R041P6 |
600V,77.5A,N沟道功率MOSFET |
2018-02-01 |
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BSC039N06NS |
60V,6.9mΩ,100A,N沟道功率MOSFET |
2018-02-01 |
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BGA7H1BN6E6327 |
用于LTE的硅锗低噪声射频放大器 |
2018-02-01 |
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IPW60R070P6 |
600V,70mΩ,53.5A,N沟道功率MOSFET |
2017-12-15 |
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BSC123N10LSG |
100V,12.3mΩ,71A,N沟道功率MOSFET |
2017-11-09 |
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ICE2QR0665 |
集成650V CoolMOS®和启动单元的离线SMPS准谐振PWM控制器 |
2017-11-09 |
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BSV236SPH6327 |
-20V，-1.5A，P沟道功率MOSFET |
2017-07-19 |
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IPD60R460CE |
600V,9.1A,N沟道功率MOSFET |
2017-07-19 |
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