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NXP, Power MOSFET

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Polarity	rDS(on)(mΩ)	Vdss(V)	Id(on)(mA)	Vgs(th)(Typ.)(V)@Id	Ciss(pF)@Vds	Power Dissipation(Max.)(W)	Qg(nc)@Vgs	Package/Temperature(℃)

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Total Results: 53

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Part #

Manufacturer

Description

Datasheet

Availability

Price (USD,incl.13% VAT)

Quantity

RoHS

Polarity

rDS(on)(mΩ)

Vdss(V)

Id(on)(mA)

Vgs(th)(Typ.)(V)@Id

Ciss(pF)@Vds

Power Dissipation(Max.)(W)

Qg(nc)@Vgs

Package/Temperature(℃)

BSH103,215

NXP Semiconductors

MOSFET N-CH 30V 0.85A SOT23

Details

400

850

400m@1mA

83@24V

0.54

2.1nC@4.5V

TO-236AB-3/-

BSH105,215

NXP Semiconductors

MOSFET N-CH 20V 1.05A SOT23

Details

200

1050

570m@1mA

152@16V

0.417

3.9nC@4.5V

TO-236AB-3/-

BSH111,215

NXP Semiconductors

MOSFET N-CH 55V 335MA SOT-23

Details

335

1.3@1mA

40@10V

0.83

1nC@10V

TO-236AB-3/-

BSH202,215

NXP Semiconductors

MOSFET P-CH 30V 520MA SOT23

Details

900

520

1.9@1mA

80@24V

0.417

2.9nC@10V

TO-236AB-3/-

BSH205,215

NXP Semiconductors

MOSFET P-CH 12V 750MA SOT-23

Details

400

750

680m@1mA

200@9.6V

0.417

3.8nC@4.5V

TO-236AB-3/-

BSN20,215

NXP Semiconductors

MOSFET N-CH 50V 173MA SOT-23

Details

173

1@1mA

25@10V

0.83

TO-236AB-3/-

BSP130,115

NXP Semiconductors

N-channel enhancement mode vertical D-MOS transistors

Details

300

350

2@1mA

120@25V

1.5

SOT-223-3/-

BSS123,215

NXP Semiconductors

MOSFET N-CH 100V 150MA SOT-23

1+	USD 0.23
25+	USD 0.21
50+	USD 0.19
100+	USD 0.16
250+	USD 0.14
500+	USD 0.08
1000+	USD 0.07

Details

6000

100

150

2.8@1mA

40@25V

0.25

TO-236AB-3/-

BSS84,215

NXP Semiconductors

MOSFET P-CH 50V 130MA SOT-23

Details

130

2@1mA

45@25V

0.25

TO-236AB-3/-

BUK92150-55A,118

NXP Semiconductors

MOSFET N-CH 55V 11A DPAK

Details

125

11000

2@1mA

338@25V

6nC@5V

DPAK/-