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Home  »  All Products  »  Discrete  »  Bipolar Transistors  »  INFINEON, General Purpose Transistors  »  SMBT2222AE6327HTSA1
 
SMBT2222AE6327HTSA1
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Manufacturer: Infineon Technologies
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  • Specifications
  • Ducuments
Type:NPN
Collector-Emitter Breakdown Voltage VCEO(Min.)(V):40
Collector Current Continuous IC(Max.)(mA):600
DC Current Gain hFE(Min.)(dB):100
DC Current Gain hFE(Max.)(dB):300
Current Gain Bandwidth Ft(Min.)(MHz):300
Package/Temperature(℃):SOT-23-3/-~150
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