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SCT027W65G3-4AG
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Price (USD,incl.13% VAT)
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Manufacturer:
STMicroelectronics
Availability:
40
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Specifications
Ducuments
VBR(V)：
650
rDS(on)(mΩ)：
39.3
Id(on)(Max.)(A)：
60
Polarity：
N-Channel
Package/Temperature(℃)：
HiP247-4/-55~200
Description：
Automotive grade silicon carbide power MOSFET, 650V
Datasheet
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