| 产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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MBR10100-M3/4W |
肖特基整流器10A,100V |
2025-12-11 |
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HVCC153Y6P102MEAX |
陶瓷电容器1000 pF ±20% |
2025-12-11 |
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SUD19P06-60-GE3 |
P-Channel 60 V (D-S) MOSFET |
2025-12-11 |
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SMF6V5A-HE3_A08 |
ESD保护二极管SMF DO219AB |
2025-12-11 |
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SM8S17CAHM3/I |
瞬态电压抑制器 |
2025-12-11 |
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AC05000004709JAC00 |
硬质合金引线绕线电阻，5W，5%，47Ω |
2025-12-02 |
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VSSB420S-M3/5BT |
表面安装TMBS（沟槽MOS势垒肖特基）整流器，200 V 1.8A |
2025-12-02 |
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IRF630PBF |
200V，400mΩ，9A，N沟道功率MOSFET |
2025-12-02 |
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SIA449DJ-T1-GE3 |
20mΩ，-30V，-12A，P沟道MOSFET |
2025-12-02 |
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SIHP12N60E-GE3 |
E系列功率MOSFET |
2025-12-02 |
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SS2PH10HM3_A/H |
2A,100V肖特基势垒整流器 |
2025-12-02 |
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VS-20CTH03STRL-M3 |
超快整流器，300V 10A |
2025-12-02 |
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CMB02070X1000GB200 |
高脉冲负载碳膜MELF电阻器，100Ω±2%1W |
2025-12-02 |
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SS3H10-E3/57T |
高压表面贴装肖特基整流器 |
2025-12-02 |
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ICM0805ER121M |
表面安装共模扼流圈 |
2025-12-02 |
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TLLY4400 |
低电流LED Ø3mm 黄色 588nm |
2025-12-02 |
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SB560-E3/54 |
肖特基势垒整流器60 V 5A |
2025-12-02 |
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US1G-E3/5AT |
400V,1A,超快整流器 |
2025-11-14 |
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VS-5ECU06-M3/9AT |
超快整流器，600V,5A FRED Pt |
2025-11-14 |
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CRCW06032K20JNEAHP |
防脉冲、高功率厚膜片式电阻器，2.2KΩ±5%0.333W |
2025-11-14 |
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TNPW080522K1BEEA |
高稳定性薄膜平片电阻器 22.1 kΩ ±0.1% 0.26W |
2025-11-14 |
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CNY17F-4X017 |
光耦合器，光电晶体管输出，无基极连接 |
2025-11-14 |
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F339X142233MF02W0 |
干扰抑制薄膜电容器0.22 µF±20% 330VAC |
2025-11-14 |
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F339X144733MI02W0 |
干扰抑制薄膜电容器0.47 µF±20% 330VAC |
2025-11-14 |
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SQD97N06-6M3L_GE3 |
60V，6.3mΩ，97A，N沟道功率MOSFET |
2025-10-29 |
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TFDU4301-TT3 |
红外收发器模块（SIR，115.2 kbit/s） |
2025-10-29 |
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SIHB22N60AE-GE3 |
600V，156mΩ，20A，N沟道功率MOSFET |
2025-10-29 |
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MMA02040C3328FB300 |
专业薄膜MELF电阻器，3.32Ω±1%0.4W |
2025-10-29 |
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IRFR210PBF |
200V,1.5Ω,2.6A,N通道电源MOSFET |
2025-10-27 |
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NTCS0805E3502JLT |
NTC 热敏电阻器 5kΩ 5% |
2025-09-26 |
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SQ2362CES-T1_GE3 |
60V，68mΩ，4.3A，N沟道MOSFET |
2025-09-26 |
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CRCW060310K0FKEA |
电阻,10KΩ±1% 0.1W |
2025-09-26 |
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CRCW0603180KFKEA |
电阻,180KΩ±1% 0.1W |
2025-09-26 |
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CRCW06035R10FKEA |
电阻,5.1Ω±1% 0.1W |
2025-09-26 |
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CRCW08053K30FKEA |
电阻,3.3KΩ±1% 0.125W |
2025-09-26 |
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TNPW060310K0DEEA |
高稳定性薄膜平片电阻器，10KΩ±0.5%0.21W |
2025-09-26 |
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SS10P4-M3/86A |
肖特基势垒整流器，40V 10A |
2025-09-26 |
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VS-90EPS16L-M3 |
高压，输入整流二极管，1600 V 90A |
2025-09-26 |
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SMM02040E1000BB300 |
薄膜迷你MELF电阻器3.100Ω±0.1% 0.25W |
2025-09-26 |
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S3J-M3/57T |
表面贴装玻璃钝化整流器3A,600V |
2025-09-26 |
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TSHG6410 |
高速红外发射二极管 |
2025-09-03 |
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RS2J-E3/52T |
表面贴装快速开关整流器 |
2025-09-03 |
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DG212BDY-T1-E3 |
四路CMOS模拟开关 |
2025-09-03 |
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NTCLE350E4103JLB0 |
NTC热敏电阻，10K |
2025-09-03 |
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SQ2389CES-T1_GE3 |
94mΩ，-40V，-4.1A，P沟道MOSFET |
2025-09-03 |
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SIHP22N60E-GE3 |
600V、180mΩ、21A、N沟道功率MOSFET |
2025-09-03 |
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SMC5K12A-M3/H |
5KW, 12V 5%,UNIDIR,SMC TVS |
2025-09-03 |
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VCAN26A2-03G-E3-18 |
ESD保护二极管SOT323 |
2025-08-19 |
|
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SFH617A-2X006 |
光电晶体管输出光耦合器 |
2025-08-19 |
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CRCW1206180RFKEA |
电阻,180Ω±1% 0.25W |
2025-08-19 |
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MMA02040D5103FB300 |
专业薄膜MELF电阻器510 kΩ±1%0.25W |
2025-08-19 |
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VO207AT |
光电晶体管输出光耦 |
2025-08-01 |
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VJ1206Y102KXEAC |
陶瓷电容器1000 pF ±10% 500V |
2025-08-01 |
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P6SMB130A-E3/52 |
表面贴装TRANSZORB®瞬态电压抑制器 |
2025-08-01 |
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SQ2348CES-T1_GE3 |
30V，24mΩ，8A，N沟道功率MOSFET |
2025-08-01 |
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SS8PH10-M3/86A |
表面贴装式高压肖特基整流器8A,100V |
2025-07-23 |
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B240A-E3/61T |
2A，40V，肖特基整流器 |
2025-07-23 |
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WSLP1206R0200FEA |
芯片电阻 20 mΩ ±1% 1W |
2025-07-23 |
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MFU0603FF00500P500 |
薄膜片式保险丝32V 0.5A |
2025-07-23 |
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IRFP9140PBF |
P沟道MOSFET |
2025-07-23 |
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MMA02040C3321FB000 |
专业薄膜MELF电阻器，3.32 KΩ±1%0.4W |
2025-07-15 |
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WFCP06123L000FE66 |
金属箔电流感测电阻器，3 mΩ±1%2W |
2025-07-15 |
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DF10SA-E3/77 |
桥式整流器 |
2025-07-07 |
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NTCALUG02A103F165A |
NTC 热敏电阻器 10k |
2025-07-07 |
|
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IHHP0603ZHERR24M01 |
超小尺寸、大电流电感器 |
2025-07-07 |
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SB1H100-E3/73 |
高压肖特基塑料整流器，100 V 1A |
2025-07-07 |
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SQS411ENW-T1_GE3 |
汽车P沟道MOSFET，-40V，16A，27.3mΩ |
2025-07-04 |
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ES2GHE3_A/H |
表面贴装超快塑料整流器2A,400V |
2025-06-09 |
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PTF651M0000BZEB |
通孔电阻器 防潮 金属薄膜1 MΩ ±0.1% 0.25W，1/4W 轴向 |
2025-05-28 |
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BZG04-200-M3-08 |
齐纳二极管 |
2025-05-28 |
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TZX7V5X-TAP |
齐纳二极管DO35 |
2025-05-28 |
|
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VDRH14V625BSE |
压敏电阻 |
2025-05-28 |
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1.5SMC440A-M3/9AT |
TVS |
2025-05-28 |
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ES1B-E3/61T |
表面贴装超快塑料整流器1A, 100V |
2025-05-28 |
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1.5SMC300A-M3/9AT |
TVS，1.5KW,300V 5%,UNIDIR,SMC |
2025-05-12 |
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MMU01020D3600DB300 |
精密薄膜MELF电阻器，360Ω±0.5%0.2W |
2025-05-12 |
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ES2BHE3_A/H |
表面贴装超快塑料整流器，100 V 2A |
2025-05-12 |
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VJ1206A680KXEMC |
68 pF ±10% 500V 陶瓷电容器 |
2025-05-12 |
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S07M-GS08 |
标准恢复整流器 |
2025-05-12 |
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RCA0603475KFHEC |
抗硫厚膜片式电阻器，475KΩ,1%,0.1W |
2025-04-24 |
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WSLP3921L5000FEA |
电流传感电阻器 -SMD,9W,0.5mΩ |
2025-04-24 |
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SD103A-TAP |
小信号肖特基二极管，40V 200mA |
2025-04-24 |
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SIZ240DT-T1-GE3 |
双N沟道40V（D-S）MOSFET |
2025-04-24 |
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SMBJ60A-E3/52 |
表面安装TRANSZORB瞬态电压抑制器 |
2025-04-17 |
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G22041431009J4C000 |
绕线电阻器，10Ω 5% |
2025-04-17 |
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TNPV12061M00BEEA |
高压薄膜平片电阻器，1 MΩ±0.1%0.25W |
2025-04-17 |
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SMCJ64CA-E3/57T |
表面贴装TRANSZORB®瞬态电压抑制器 |
2025-04-17 |
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MAL214658471E3 |
470 µF 63 V 铝电解电容器 |
2025-04-17 |
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BZW04-44-E3/54 |
TRANSZORB®瞬态电压抑制器 |
2025-04-17 |
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IHLP2525CZER2R2M8A |
IHLP汽车电感器,2.2 µH |
2025-04-17 |
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MMA02040D2009DB300 |
专业薄膜MELF电阻器，20Ω±0.5%0.25W |
2025-04-17 |
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WSLF25122L000FEA |
电阻，2 mΩ±1%5W |
2025-04-17 |
|
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SMBJ130CA-M3/52 |
600W,130V 5%,SMB TVS |
2025-03-19 |
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MSS1P4HM3_A/H |
表面贴装肖特基势垒整流器，40V 1A |
2025-03-13 |
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BYV28-100-TR |
超快雪崩烧结玻璃二极管，100 V 3.5A |
2025-03-13 |
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MBRB2060CT-M3/I |
双共阴极肖特基整流器，20A，60V |
2025-03-13 |
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RS1PG-M3/84A |
快速开关整流器，400V 1A |
2025-03-13 |
|
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SQJ180EP-T1_GE3 |
80V，3mΩ，248A，N沟道功率MOSFET |
2025-02-19 |
|
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V3PM15-M3/H |
TMBS（沟槽MOS势垒肖特基）整流器，150 V 1.8A |
2025-02-19 |
|
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SIC653ACD-T1-GE3 |
50 A VRPower Integrated Power Stage |
2025-02-19 |
|
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1.5SMC39A-E3/57T |
表面贴装TRANSZORB®瞬态电压抑制器 |
2025-02-19 |
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SS3P6L-M3/86A |
肖特基势垒整流器，60 V 3A |
2025-02-19 |
|
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CRCW12061R50FKEAHP |
防脉冲、高功率厚膜片式电阻器，1.5Ω±1%0.75W |
2025-02-19 |
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UMA02040F3323CA300 |
超精密薄膜MELF电阻器 |
2025-02-07 |
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SD101CW-E3-08 |
肖特基二极管SOD123 |
2025-02-07 |
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WSL3921L2000FEA |
电阻器，0.2 mΩ±1%3W |
2025-02-07 |
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BAS21-HE3_A-08 |
小信号开关二极管，高压，200 V 200mA |
2025-01-06 |
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SS2FL4HM3/H |
表面贴装肖特基势垒整流器，40V 2A |
2025-01-06 |
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WSL0603R0300FEA |
电阻器，30 mΩ±1%0.1W |
2025-01-06 |
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MMU0102AC5009GB300 |
高频薄膜MELF电阻器，50Ω，2% |
2025-01-06 |
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SI7469DP-T1-GE3 |
25mΩ，-80V，-28A，P沟道功率MOSFET |
2024-12-05 |
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SQJA86EP-T1_GE3 |
80V，19mΩ，30A，N沟道功率MOSFET |
2024-12-05 |
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S1MHE3_A/H |
表面贴装玻璃钝化整流器1000 V 1A |
2024-12-05 |
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CRCW08055R60FKEAHP |
防脉冲、高功率厚膜片式电阻器，5.6Ω±1%0.5W |
2024-11-21 |
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SQJ182EP-T1_GE3 |
80V，5mΩ，210A，N沟道功率MOSFET |
2024-11-06 |
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MKP1848550704K2L20 |
薄膜电容器 |
2024-11-06 |
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SQJ872EP-T1_GE3 |
150V，35.5mΩ，24.5A，N沟道功率MOSFET |
2024-11-06 |
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IRFR430ATRPBF |
500V，1.7Ω，5A，N沟道功率MOSFET |
2024-11-06 |
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SE70PJHM3_A/H |
表面贴装ESD能力整流器 |
2024-11-06 |
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VS-E5PH7512L-N3 |
Hyperfast整流器1200 V 75A |
2024-11-06 |
|
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TX3B226K020C0700 |
22uf Bcase 20V电容 |
2024-10-14 |
|
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SIC448ED-T1-GE3 |
4.5 V至45 V输入，6 A，microBUCKDC/DC转换器 |
2024-10-14 |
|
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SIR610DP-T1-RE3 |
200V，31.9mΩ，35.4A，N沟道功率MOSFET |
2024-09-10 |
|
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IHLP2525CZER2R2M11 |
IHLP®商用电感器，2.2 µH，低DCR系列 |
2024-09-10 |
|
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V8P22HM3_A/H |
高电流密度表面安装TMBS®（沟槽MOS势垒肖特基）整流器 |
2024-08-13 |
|
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TX3B336K020C1000 |
钽电容器，33µF |
2024-07-18 |
|
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IRF644STRRPBF |
250V，280mΩ，14A，N沟道功率MOSFET |
2024-06-28 |
|
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SI4816BDY-T1-GE3 |
30V,5.8A,8.2A,带肖特基二极管双N沟道MOSFET |
2024-06-28 |
|
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VEML6030 |
具有I2C接口的高精度环境光传感器 |
2024-06-28 |
|
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TNPW0603100KBEEA |
薄膜芯片电阻 100 kΩ ±0.1% 0.1W |
2024-06-28 |
|
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TNPW06032K70BEEA |
芯片电阻，2.7 kΩ ±0.1% 0.1W |
2024-06-28 |
|
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SQD50P04-09L_GE3 |
9.4mΩ，-40V，-50A，P沟道MOSFET |
2024-06-28 |
|
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SI7431DP-T1-GE3 |
-200V,-3.8A,P沟道MOSFET |
2024-06-19 |
|
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SI7463ADP-T1-GE3 |
10mΩ，-40V，-46A，P沟道功率MOSFET |
2024-06-19 |
|
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BAV19W-HE3-08 |
小信号开关二极管，高压 |
2024-06-04 |
|
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SQ3418EV-T1_GE3 |
40V，32mΩ，8A，N沟道MOSFET |
2024-06-04 |
|
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SMCJ15CA-E3/57T |
表面贴装TRANSZORB瞬态电压抑制器 |
2024-05-07 |
|
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SMA6J7.5A-E3/5A |
表面安装TRANSZORB®瞬态电压抑制器,600W,7.5V 5%,UNIDIR,SMA |
2024-05-07 |
|
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AS3BDHM3_A/H |
表面安装整流器3A, 200V, SM |
2024-05-07 |
|
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VSMY2943SL |
940nm高速红外发射二极管，表面发射器技术 |
2024-05-07 |
|
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S2JHE3_A/H |
表面安装玻璃钝化整流器，1.5A, 600V, SMB |
2024-04-12 |
|
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MAL214699806E3 |
100 µF铝电解电容器 径向 |
2024-04-12 |
|
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IRFPG50PBF |
N-沟道 MOSFET |
2024-04-12 |
|
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VY1222M47Y5UQ6TV0 |
安全电容器 2200pF X760 Y500VAC 20% Y5U |
2024-04-12 |
|
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595D107X0016D2T |
钽电容器100 µF |
2024-04-12 |
|
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SI2356DS-T1-GE3 |
40V,51mΩ,4.3A,N 沟道功率 MOSFET |
2024-03-15 |
|
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MURS340-M3/9AT |
表面贴装超快塑料整流器 |
2024-02-29 |
|
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MURS360-M3/9AT |
表面贴装超快塑料整流器 |
2024-02-29 |
|
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TNPW06036K80BEEA |
薄膜芯片电阻 6.8 kΩ ±0.1% 0.1W |
2024-02-29 |
|
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595D107X0010D2T |
固体钽片电容器,100 µf,涂层 |
2024-02-29 |
|
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TZMC43-GS08 |
齐纳二极管 |
2024-02-29 |
|
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NTCALUG01A473HA |
NTC 热敏电阻器 47kΩ 环形焊片 |
2024-02-29 |
|
 |
BFC233810154 |
0.15 µF干扰抑制薄膜电容器-X1级径向MKP 440 VAC-标准跨线 |
2024-02-29 |
|
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MKT1820610015 |
10µF 薄膜电容器 |
2024-02-29 |
|
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VO14642AT |
固态继电器 |
2023-12-27 |
|
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IRFU320PBF |
400V，1.8Ω，3.1A，N沟道功率MOSFET |
2023-12-27 |
|
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IRFP460HPBF |
500V，270mΩ，20A，N沟道功率MOSFET |
2023-12-27 |
|
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IRF840ALPBF |
500V，850mΩ，8A，N沟道功率MOSFET |
2023-12-27 |
|
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IRFB9N60APBF |
600V，750mΩ，9.2A，N沟道功率MOSFET |
2023-12-27 |
|
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IRFU120PBF |
250V，2Ω，2.2A，N沟道功率MOSFET |
2023-12-13 |
|
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SQJ459EP-T1_GE3 |
18mΩ,-60V,-52A,P 沟道功率 MOSFET |
2023-11-28 |
|
 |
SUD19N20-90-E3 |
200V,90mΩ,19A,N沟道功率MOSFET |
2023-11-28 |
|
 |
RS1KHE3_A/H |
表面安装快速开关整流器 |
2023-11-06 |
|
 |
IRFL210TRPBF |
200V，1.5Ω，0.96A，N沟道功率MOSFET |
2023-11-06 |
|
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T51D107M010C0040 |
表面安装芯片电容器 |
2023-11-06 |
|
 |
T51D107M016C0050 |
vPolyTanTM聚合物表面安装芯片电容器 |
2023-11-06 |
|
 |
T51D227M010C0040 |
vPolyTanTM聚合物表面安装芯片电容器 |
2023-11-06 |
|
 |
T51D227M6R3C0040 |
表面安装芯片电容器 |
2023-11-06 |
|
 |
T51D337M004C0040 |
表面安装芯片电容器 |
2023-11-06 |
|
 |
T51D476M025C0060 |
vPolyTanTM聚合物表面安装芯片电容器 |
2023-11-06 |
|
 |
1.5SMC220A-E3/9AT |
TVS二极管 表面贴装型 |
2023-10-20 |
|
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MURS120-E3/52T |
超快整流器,表面贴装,200V,1A |
2023-10-11 |
|
 |
V20PWM60C-M3/I |
肖特基二极管，60 V 10A |
2023-09-06 |
|
 |
SUM55P06-19L-E3 |
19mΩ,-60V,-55A,P沟道功率MOSFET |
2023-09-06 |
|
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SI5403DC-T1-GE3 |
30mΩ,-30V,-6A,P沟道功率MOSFET |
2023-09-06 |
|
 |
NTCALUG01A103F161A |
NTC热敏电阻器 10k |
2023-09-06 |
|
 |
SML4738A-E3/61 |
表面安装齐纳二极管 |
2023-09-06 |
|
 |
SI7415DN-T1-GE3 |
65mΩ，-60V，-15A，P沟道功率MOSFET |
2023-09-06 |
|
 |
SIS862ADN-T1-GE3 |
60V,7.2mΩ,52A,N 沟道功率 MOSFET |
2023-07-18 |
|
 |
AY2101K29Y5SS63L7 |
陶瓷电容器 Y5S，圆片式100 pF ±10% 440VAC |
2023-07-18 |
|
 |
SUM110P06-07L-E3 |
6.9mΩ,-60V,-110A,P沟道功率MOSFET |
2023-06-28 |
|
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1.5SMC30CAHE3_A/H |
表面贴装 TRANSZORB 瞬态电压抑制器 |
2023-06-28 |
|
 |
SQJ147ELP-T1_GE3 |
12.5mΩ,-40V,-90A,P沟道功率MOSFET |
2023-06-28 |
|
 |
293D226X0035E2TE3 |
固体钽电容器 |
2023-06-28 |
|
 |
SQ7414CENW-T1_GE3 |
60V,23mΩ,18A,N沟道功率MOSFET |
2023-06-28 |
|
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WSL0805R0100DEA18 |
片式电阻器，10 mΩ±0.5%0.25W |
2023-06-28 |
|
 |
IHLP2525CZER1R0M01 |
1uH,±20%,高电流IHLP电感器 |
2023-05-06 |
|
 |
P4SMA12A-E3/61 |
表面贴装TRANSZORB瞬态电压抑制器 |
2023-05-06 |
|
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SI7489DP-T1-GE3 |
41mΩ,-100V,-28A,P沟道功率MOSFET |
2023-05-06 |
|
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MURS120HE3_A/H |
超快整流器,表面贴装,200V,1A |
2023-04-20 |
|
 |
WSR3R0150FEA |
电流传感电阻器 - SMD 3w,15mΩ,1% |
2023-04-20 |
|
 |
SFH615A-3X009 |
晶体管输出光电耦合器 |
2023-04-20 |
|
 |
BZG05C3V3-HM3-08 |
齐纳二极管,3.3 V 1.25 W |
2023-04-20 |
|
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CRCW040210R5FKED |
标准厚膜片式电阻器，10.5Ω±1%0.063W |
2023-04-20 |
|
 |
VO615A-9 |
光电晶体管输出光耦合器，耐高温 |
2023-04-20 |
|
 |
VO615A-3X007T |
光电晶体管输出光耦 |
2023-04-20 |
|
 |
DG468DV-T1-E3 |
低功耗、高电压 SPST 模拟开关 |
2023-04-20 |
|
 |
CRCW04021M60JNED |
标准厚膜片式电阻器 |
2023-03-21 |
|
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CRCW06034R70FKEA |
标准厚膜片式电阻器，4.7Ω±1%0.1W |
2023-03-21 |
|
 |
ZM4752A-GS08 |
33V,±5%,1W,齐纳二极管 |
2023-03-21 |
|
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SQ2315ES-T1_GE3 |
50mΩ,-12V,-5A,P 沟道功率 MOSFET |
2023-03-09 |
|
 |
PR02000201503JA100 |
功率金属膜引线电阻器 |
2023-03-09 |
|
 |
CRCW020147K0FKED |
厚膜片式电阻器,47kΩ,±1%,0.05W |
2023-03-09 |
|
 |
CRCW04029K09FKED |
标准厚膜片式电阻器，9.09 kΩ±1%0.063W |
2023-03-09 |
|
 |
MSX1PBHM3/89A |
表面贴装ESD整流器 |
2023-02-14 |
|
 |
BZX384B16-E3-08 |
齐纳二极管 |
2023-02-14 |
|
 |
MBR30H60CT-E3/45 |
肖特基二极管60 V 15A |
2023-02-14 |
|
 |
P6SMB160A-E3/52 |
表面贴装 TRANSZORB 瞬态电压抑制器 |
2022-12-28 |
|
 |
CRCW02014K70FKED |
厚膜电阻器,SMD,50mW, 4.7Kohms,1%,100ppm |
2022-12-06 |
|
 |
CRCW02010000Z0ED |
厚膜电阻器,SMD |
2022-12-06 |
|
 |
MKP1848510924K2L20 |
金属化聚丙烯薄膜电容器 DC-Link 电容器 |
2022-11-16 |
|
 |
293D476X0020E2TE3 |
固体钽电容器 |
2022-11-16 |
|
 |
1N4006-E3/54 |
通用塑料整流器,800 V 1A |
2022-11-16 |
|
 |
T55D227M010C0007 |
220uF,10V,±20%,钽质电容器-固体 |
2019-05-16 |
|
 |
T55V157M6R3C0018 |
150uF,3.6V,±20%,钽质电容器-固体 |
2019-05-16 |
|
 |
P6SMB30AHE3/52 |
峰值功率600W,30V,单向通道，齐纳TVS |
2018-12-14 |
|