产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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IRFB18N50KPBF |
500V,290mΩ,17A,N沟道功率MOSFET |
2024-03-15 |
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SI2356DS-T1-GE3 |
40V,51mΩ,4.3A,N 沟道功率 MOSFET |
2024-03-15 |
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SQJA06EP-T1_GE3 |
60V,8.7mΩ,57A,N沟道功率MOSFET |
2024-03-15 |
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TZMC5V1-GS08 |
齐纳二极管 |
2024-03-15 |
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SIHG018N60E-GE3 |
600V,23mΩ,99A,N沟道功率MOSFET |
2024-03-15 |
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SMAJ40A-E3/61 |
表面贴装TRANSZORB瞬态电压抑制器 |
2024-02-29 |
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VS-20CTH03S-M3 |
超快整流器,2 x 10 A FRED Pt® |
2024-02-29 |
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WSKW06121L000FEA |
1 mΩ±1% 1W 芯片电阻 |
2024-02-29 |
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WSKW06123L000FEA |
芯片电阻3 mΩ ±1% 1W |
2024-02-29 |
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MURS340-M3/9AT |
表面贴装超快塑料整流器 |
2024-02-29 |
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MURS360-M3/9AT |
表面贴装超快塑料整流器 |
2024-02-29 |
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TCLT1005 |
光电晶体管输出光耦 |
2024-02-29 |
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MMA02040D3003FB300 |
芯片电阻 |
2024-02-29 |
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SMM02040C3303FB300 |
薄膜微型MELF电阻器SMM0204 50 330KΩ 1% B3 |
2024-02-29 |
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WSKW06122L000FEA |
芯片电阻,2 mΩ ±1% 1W |
2024-02-29 |
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WSLP2010R0100FEA |
Power Metal Strip®电阻器,10mΩ±1%2W |
2024-02-29 |
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VS-20MQ100NTRPBF |
肖特基二极管 100 V 2.1A |
2024-02-29 |
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TNPW06036K80BEEA |
薄膜芯片电阻 6.8 kΩ ±0.1% 0.1W |
2024-02-29 |
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595D107X0010D2T |
固体钽片电容器,100 µf,涂层 |
2024-02-29 |
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SIHP18N50C-E3 |
500V,270mΩ,18A,N沟道功率MOSFET |
2024-02-29 |
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V1FL45HM3/H |
肖特基整流器45 V 1A |
2024-02-29 |
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TZMC43-GS08 |
齐纳二极管 |
2024-02-29 |
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NTCALUG01A473HA |
NTC 热敏电阻器 47kΩ 环形焊片 |
2024-02-29 |
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BFC233810154 |
0.15 µF干扰抑制薄膜电容器-X1级径向MKP 440 VAC-标准跨线 |
2024-02-29 |
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BFC233921104 |
0.1µF 薄膜电容器 |
2024-02-29 |
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MKP1848550704K2 |
薄膜电容器 |
2024-02-29 |
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MKT1820610015 |
10µF 薄膜电容器 |
2024-02-29 |
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P4SMA300A-M3/61 |
TRANSZORB®瞬态电压抑制器 |
2023-12-27 |
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S5M-E3/57T |
表面贴装玻璃钝化整流器,1000V,5A |
2023-12-27 |
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VO14642AT |
固态继电器 |
2023-12-27 |
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ILQ1 |
光电晶体管输出光耦 |
2023-12-27 |
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IRFU320PBF |
400V,1.8Ω,3.1A,N沟道功率MOSFET |
2023-12-27 |
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IRF830PBF |
500V,1.5Ω,4.5A,N沟道功率MOSFET |
2023-12-27 |
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IRFP460HPBF |
500V,270mΩ,20A,N沟道功率MOSFET |
2023-12-27 |
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IRFP450APBF |
500V,400mΩ,14A,N沟道功率MOSFET |
2023-12-27 |
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IRF840ALPBF |
500V,850mΩ,8A,N沟道功率MOSFET |
2023-12-27 |
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IRFB9N60APBF |
600V,750mΩ,9.2A,N沟道功率MOSFET |
2023-12-27 |
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IRFPE50PBF |
800V,1.2Ω,7.8A,N沟道功率MOSFET |
2023-12-27 |
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IRFBE30SPBF |
800V,3Ω,4.1A,N沟道功率MOSFET |
2023-12-27 |
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MMA02040D2003FB300 |
专业薄膜MELF电阻器 |
2023-12-13 |
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IRFU120PBF |
250V,2Ω,2.2A,N沟道功率MOSFET |
2023-12-13 |
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SQJ459EP-T1_GE3 |
18mΩ,-60V,-52A,P 沟道功率 MOSFET |
2023-11-28 |
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SUD19N20-90-E3 |
200V,90mΩ,19A,N沟道功率MOSFET |
2023-11-28 |
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V2PM15HM3/H |
肖特基整流器150 V 2A |
2023-11-28 |
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IRFD110PBF |
100V,1A,N沟道功率MOSFET |
2023-11-14 |
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SI2377EDS-T1-GE3 |
61mΩ,-20V,-4.4A,P沟道功率MOSFET |
2023-11-14 |
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BZD27C24P-HE3-08 |
齐纳二极管 |
2023-11-14 |
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RS1KHE3_A/H |
表面安装快速开关整流器 |
2023-11-06 |
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IRFL210TRPBF |
200V,1.5Ω,0.96A,N沟道功率MOSFET |
2023-11-06 |
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T51D107M010C0040 |
表面安装芯片电容器 |
2023-11-06 |
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T51D107M016C0050 |
vPolyTanTM聚合物表面安装芯片电容器 |
2023-11-06 |
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T51D227M010C0040 |
vPolyTanTM聚合物表面安装芯片电容器 |
2023-11-06 |
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T51D227M6R3C0040 |
表面安装芯片电容器 |
2023-11-06 |
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T51D337M004C0040 |
表面安装芯片电容器 |
2023-11-06 |
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T51D476M025C0060 |
vPolyTanTM聚合物表面安装芯片电容器 |
2023-11-06 |
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VS-10MQ040HM3/5AT |
40 V高性能肖特基整流器,1 A |
2023-10-20 |
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1.5SMC220A-E3/9AT |
TVS二极管 表面贴装型 |
2023-10-20 |
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GSOT36C-E3-08 |
ESD抑制器36V |
2023-10-11 |
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BYV26EGP-E3/73 |
玻璃钝化超快塑料整流器,1000V,1A |
2023-10-11 |
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MURS120-E3/52T |
超快整流器,表面贴装,200V,1A |
2023-10-11 |
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VS-30CTH02-M3 |
超快整流器,200 V 15A |
2023-10-11 |
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VS-MUR1520-M3 |
超快整流器,15 A,200V |
2023-10-11 |
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VS-RA220FA120 |
标准整流器,220 A |
2023-09-27 |
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TMCMA0J107MTRF |
钽质电容器-固体SMD,100µF |
2023-09-27 |
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VEML6040A3OG |
带 I2C 接口的 RGBW 颜色传感器 |
2023-09-27 |
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V20PWM60C-M3/I |
肖特基二极管,60 V 10A |
2023-09-06 |
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SUM55P06-19L-E3 |
19mΩ,-60V,-55A,P沟道功率MOSFET |
2023-09-06 |
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SI5403DC-T1-GE3 |
30mΩ,-30V,-6A,P沟道功率MOSFET |
2023-09-06 |
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NTCALUG01A103F161A |
NTC热敏电阻器 10k |
2023-09-06 |
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NTCS0805E3103FLT |
NTC 热敏电阻器 10kΩ |
2023-09-06 |
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SML4738A-E3/61 |
表面安装齐纳二极管 |
2023-09-06 |
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SI7415DN-T1-GE3 |
65mΩ,-60V,-15A,P沟道功率MOSFET |
2023-09-06 |
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SIS862ADN-T1-GE3 |
60V,7.2mΩ,52A,N 沟道功率 MOSFET |
2023-07-18 |
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1.5SMC56A-E3/57T |
表面贴装TRANSZORB瞬态电压抑制器 |
2023-07-18 |
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NTCS0805E3473JHT |
NTC 热敏电阻器 47kΩ |
2023-07-18 |
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AY2101K29Y5SS63L7 |
陶瓷电容器 Y5S,圆片式100 pF ±10% 440VAC |
2023-07-18 |
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SUM110P06-07L-E3 |
6.9mΩ,-60V,-110A,P沟道功率MOSFET |
2023-06-28 |
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1.5SMC30CAHE3_A/H |
表面贴装 TRANSZORB 瞬态电压抑制器 |
2023-06-28 |
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SISS63DN-T1-GE3 |
2.7mΩ,-20V,-31.5A,P沟道功率MOSFET |
2023-06-28 |
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SQJ147ELP-T1_GE3 |
12.5mΩ,-40V,-90A,P沟道功率MOSFET |
2023-06-28 |
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293D226X0035E2TE3 |
固体钽电容器 |
2023-06-28 |
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BZD27C20P-HE3-08 |
具有浪涌电流规格的齐纳二极管 |
2023-06-28 |
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SQ7414CENW-T1_GE3 |
60V,23mΩ,18A,N沟道功率MOSFET |
2023-06-28 |
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SQ2318AES-T1_GE3 |
40V,31mΩ,8A,N沟道功率MOSFET |
2023-06-28 |
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WSL0805R0100DEA18 |
片式电阻器,10 mΩ±0.5%0.25W |
2023-06-28 |
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SiC467ED-T1-GE3 |
降压开关稳压器 |
2023-05-24 |
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SS5P10HM3_A/I |
肖特基二极管 100 V 5A |
2023-05-24 |
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VY1102M35Y5UQ6TV0 |
陶瓷电容器 1000 pF ±20% 760VAC |
2023-05-24 |
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IHLP2525CZER1R0M01 |
1uH,±20%,高电流IHLP电感器 |
2023-05-06 |
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VB30200C-E3/8W |
肖特基整流器,200V,30A |
2023-05-06 |
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P4SMA12A-E3/61 |
表面贴装TRANSZORB瞬态电压抑制器 |
2023-05-06 |
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SI7489DP-T1-GE3 |
41mΩ,-100V,-28A,P沟道功率MOSFET |
2023-05-06 |
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MURS120HE3_A/H |
超快整流器,表面贴装,200V,1A |
2023-04-20 |
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WSR3R0150FEA |
电流传感电阻器 - SMD 3w,15mΩ,1% |
2023-04-20 |
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SFH615A-3X009 |
晶体管输出光电耦合器 |
2023-04-20 |
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BZG05C3V3-HM3-08 |
齐纳二极管,3.3 V 1.25 W |
2023-04-20 |
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CRCW040210R5FKED |
标准厚膜片式电阻器,10.5Ω±1%0.063W |
2023-04-20 |
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VO615A-9 |
光电晶体管输出光耦合器,耐高温 |
2023-04-20 |
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TCLT1009 |
单通道晶体管输出光电耦合器 |
2023-04-20 |
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VO615A-3X007T |
光电晶体管输出光耦 |
2023-04-20 |
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DG468DV-T1-E3 |
低功耗、高电压 SPST 模拟开关 |
2023-04-20 |
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CRCW04021M60JNED |
标准厚膜片式电阻器 |
2023-03-21 |
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CRCW06034R70FKEA |
标准厚膜片式电阻器,4.7Ω±1%0.1W |
2023-03-21 |
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ZM4752A-GS08 |
33V,±5%,1W,齐纳二极管 |
2023-03-21 |
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IHLP2020BZER1R0M11 |
IHLP商用电感器,低DCR系列 |
2023-03-21 |
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IHLP2525CZER1R0M01 |
1uH,±20%,高电流IHLP电感器 |
2023-03-21 |
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VB30100C-E3/8W |
肖特基二极管与整流器 30A,100V |
2023-03-21 |
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AC03000001500JAC00 |
线绕电阻器,3W,150Ω,5% |
2023-03-21 |
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SQ2315ES-T1_GE3 |
50mΩ,-12V,-5A,P 沟道功率 MOSFET |
2023-03-09 |
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PR02000201503JA100 |
功率金属膜引线电阻器 |
2023-03-09 |
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WSL10203L000FEA |
片式电阻器,3 mΩ±1%2W |
2023-03-09 |
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CRCW020147K0FKED |
厚膜片式电阻器,47kΩ,±1%,0.05W |
2023-03-09 |
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CRCW04029K09FKED |
标准厚膜片式电阻器,9.09 kΩ±1%0.063W |
2023-03-09 |
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MSX1PBHM3/89A |
表面贴装ESD整流器 |
2023-02-14 |
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BZX384B16-E3-08 |
齐纳二极管 |
2023-02-14 |
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MBR30H60CT-E3/45 |
肖特基二极管60 V 15A |
2023-02-14 |
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P6SMB160A-E3/52 |
表面贴装 TRANSZORB 瞬态电压抑制器 |
2022-12-28 |
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CRCW02014K70FKED |
厚膜电阻器,SMD,50mW, 4.7Kohms,1%,100ppm |
2022-12-06 |
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CRCW02010000Z0ED |
厚膜电阻器,SMD |
2022-12-06 |
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VY1222M43Y5UC6UV0 |
陶瓷电容器 Y5U,2200 pF ±20% 760VAC |
2022-11-16 |
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MKP1848510924K2L20 |
金属化聚丙烯薄膜电容器 DC-Link 电容器 |
2022-11-16 |
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293D476X0020E2TE3 |
固体钽电容器 |
2022-11-16 |
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1N4006-E3/54 |
通用塑料整流器,800 V 1A |
2022-11-16 |
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VS-30ETH06-M3 |
超快整流器,600 V 30A |
2022-11-16 |
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1.5SMC33CAHE3/57T |
28.2VWM,1500W,表贴型双向TVS二极管 |
2019-05-16 |
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T55D227M010C0007 |
220uF,10V,±20%,钽质电容器-固体 |
2019-05-16 |
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T55V157M6R3C0018 |
150uF,3.6V,±20%,钽质电容器-固体 |
2019-05-16 |
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P6SMB30AHE3/52 |
峰值功率600W,30V,单向通道,齐纳TVS |
2018-12-14 |
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GSD2004WS-E3-08 |
240V,225mA,高压小信号开关二极管 |
2017-03-24 |
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BAV21WS-E3-18 |
200V,250mA,高压小信号开关二极管 |
2017-03-24 |
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SMCJ54A-E3/57T |
54VWM,1500W,单通道TVS二极管 |
2016-12-09 |
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TSOP4838 |
45m,38KHz,红外接收器模块用于远程控制系统 |
2016-08-11 |
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SMCJ12CA-E3/57T |
1500W,12V,双向通道表贴TVS二极管 |
2016-08-02 |
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ILD213T |
双通道光电晶体管输出型光电耦合器 |
2016-04-22 |
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SMAJ6.5CA-E3/61 |
400W,6.5V,双向TVS二极管 |
2016-04-22 |
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