产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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MC33375ST-3.3T3G |
300 mA,带开关控制的低压差稳压器 |
2024-12-05 |
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NTTFS5C454NLTAG |
40V,85A,单N沟道功率MOSFET |
2024-12-05 |
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NCP114AMX330TBG |
3.3V固定输出,300mA,CMOS低压差稳压器 |
2024-12-05 |
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2SA2222SG |
-50V,-10A,低VCE(sat),PNP双极晶体管 |
2024-12-05 |
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1N4746ATR |
稳压二极管 |
2024-12-05 |
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NTH4L023N065M3S |
碳化硅(SiC)MOSFET |
2024-12-05 |
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SMUN5213T1G |
NPN双极数字晶体管 |
2024-11-21 |
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NTMFS5C645NLT1G |
60V,100A,4mΩ,N沟道功率MOSFET |
2024-11-21 |
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SNCV5700DR2G |
大电流IGBT栅极驱动器 |
2024-11-21 |
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NCL38046PADR2G |
CC/CV/CP二次侧控制器 |
2024-11-21 |
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FIN1104MTC |
LVDS 4 端口高速中继器 |
2024-11-21 |
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2N4403TF |
PNP双极晶体管,TO-92 |
2024-11-21 |
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NDSH40120CDN |
碳化硅肖特基二极管,1200 V 20A |
2024-11-06 |
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NCS2333MUTBG |
精度运算放大器,低功耗,零漂移 |
2024-11-06 |
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FDC2612 |
200V,1.1A,725mΩ,N沟道PowerTrenchMOSFET |
2024-11-06 |
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NCP1632ADR2G |
临界传导模式(CrM)功率因数控制器,交错 |
2024-11-06 |
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SMUN5213T1G |
NPN双极数字晶体管 |
2024-11-06 |
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NTHL022N120M3S |
1200V,30mΩ,68A,N沟道碳化硅MOSFET |
2024-11-06 |
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FDP61N20 |
200V,61A,41mΩ,N沟道功率MOSFET |
2024-11-06 |
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MM74HCT540MTCX |
八进制三态缓冲器,反相 |
2024-11-06 |
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MM74HC04MX |
六路逆变器 |
2024-11-06 |
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RS07J-GS08 |
快速整流器表面安装,600 V 500mA |
2024-11-06 |
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NTBG022N120M3S |
1200V,30mΩ,72A,SiC MOSFET |
2024-11-06 |
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NTBG060N090SC1 |
60 mohm,900 V,碳化硅(SiC)MOSFET-EliteSiC |
2024-11-06 |
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NCV59748MLADJTBG |
LDO稳压器,1.5A超低压降,高PSRR,低噪声 |
2024-11-06 |
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74ACT245MTCX |
带3态输入/输出的八通道双向收发器 |
2024-11-06 |
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FXL4T245BQX |
低压双电源4位信号转换器 |
2024-11-06 |
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74LCX244WMX |
低压缓冲器/线路驱动器 |
2024-11-06 |
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SZSM05T1G |
5V,双路共阳二极管TVS带ESD保护 |
2024-11-06 |
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VS-E5PH7512L-N3 |
Hyperfast整流器1200 V 75A |
2024-11-06 |
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NTMFS5C673NLT1G |
60V,9.2mΩ,50A,单N沟道逻辑电平功率MOSFET |
2024-11-06 |
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NCP1076BBP100G |
用于稳健和高效电源的增强型离线开关稳压器 |
2024-11-06 |
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MC74VHC1GT08DBVT1G |
单2输入AND门极,TTL电平 |
2024-11-06 |
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FDMC86262P |
307mΩ,-105V,-2A,P沟道功率MOSFET |
2024-11-06 |
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NDSH10170A |
碳化硅肖特基二极管 1700V,10A |
2024-11-06 |
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QED234 |
塑料红外发光二极管 |
2024-11-06 |
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NCP12510BSN100T1G |
电流模式PWM控制器 |
2024-10-14 |
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SBC817-25LT1G |
通用晶体管 |
2024-10-14 |
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MOC3062SR2M |
三端双向可控硅驱动器光耦合器 |
2024-10-14 |
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ESD7181MUT5G |
单线双向,低电容,ESD保护二极管 |
2024-09-10 |
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NST3946DXV6T1G |
双通用晶体管 |
2024-09-10 |
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NL17SZ14DFT2G |
单施密特触发反相器 |
2024-09-10 |
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LM2931CDR2G |
100mA,可调输出,带有60V负载保护的低压差稳压器 |
2024-09-10 |
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SBAS116LT1G |
75V开关二极管 |
2024-09-10 |
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SZMMSZ5232BT1G |
500mW齐纳二极管 |
2024-09-10 |
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SZMMSZ4689T1G |
5.1V齐纳稳压管 |
2024-09-10 |
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LM2931D-5.0R2G |
100mA,可调输出,带有60V负载保护的低压差稳压器 |
2024-09-10 |
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NB3V1104CMTTBG |
3.3 V/2.5 V/1.8 V LVCMOS低倾斜扇出缓冲器系列 |
2024-08-13 |
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1N5365BRLG |
36V齐纳电压,5W,硅齐纳稳压二极管 |
2024-08-13 |
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BC848CDW1T1G |
30V通用型双NPN放大器晶体管(SOT-363封装) |
2024-08-13 |
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MC78M05ACDTRKG |
500 mA 正电压输出稳压器 |
2024-08-13 |
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NCP3064BDR2G |
带使能端的1.5A,升压/降压/反相开关稳压器 |
2024-08-13 |
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MJD210G |
互补型功率晶体管 |
2024-08-13 |
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NJVMJD32CT4G |
补偿型功率晶体管 |
2024-08-13 |
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FDC2612 |
200V,1.1A,725mΩ,N沟道PowerTrenchMOSFET |
2024-08-13 |
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FDT3612 |
100V,3.7A,120mΩ,N沟道功率MOSFET |
2024-08-13 |
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FFB20UP20STM |
20 A,200 V 超快速二极管 |
2024-08-13 |
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MPSA42 |
NPN 双极小信号晶体管 |
2024-08-13 |
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NVMFS5C468NLT1G |
40V 37A 10.3mΩ,N沟道功率MOSFET |
2024-08-13 |
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NCP51530BMNTWG |
700V- 3.5 / 3A高低侧MOSFET驱动器 |
2024-08-13 |
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NC7S32M5X |
TinyLogic HS 2输入或门 |
2024-08-13 |
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1N914BTR |
小信号二极管,100 V 200mA |
2024-08-13 |
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NCP1342ANDCDAD1R2G |
准谐振反激式控制器 |
2024-08-13 |
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NCP1632ADR2G |
临界传导模式(CrM)功率因数控制器,交错 |
2024-08-13 |
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NTMFS5C670NLT3G |
60V,17A,6.1mΩ,单N沟道功率MOSFET |
2024-08-13 |
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MC74AC86DR2G |
四2输入异或门 |
2024-08-13 |
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NDT3055 |
60V,4A,100mΩ,N沟道增强模型场效应晶体管 |
2024-08-13 |
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CAV25256YE-GT3 |
EEPROM 串行 256-Kb SPI - 汽车级 |
2024-08-13 |
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NVMFD5C668NLWFT1G |
60V,6.5mΩ,68A,N沟道功率MOSFET |
2024-07-18 |
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NTH4L013N120M3S |
碳化硅(SiC)MOSFET–EliteSiC,13mΩ,1200V,M3S |
2024-07-18 |
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NTMT045N065SC1 |
碳化硅(SiC)MOSFET-EliteSiC,33 mohm,650 V,M2,Power88 |
2024-07-18 |
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NTHL040N65S3HF |
650V,65A,40mΩ,N沟道功率MOSFET |
2024-07-18 |
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NVMFD5C466NLWFT1G |
双N沟道功率MOSFET |
2024-07-18 |
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NVMFS5C612NLAFT1G |
60V,250A,N沟道功率MOSFET |
2024-07-18 |
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NVMTS0D4N04CLTXG |
40V,553.8A,0.4mΩ,N沟道功率MOSFET |
2024-07-18 |
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NVMTS0D7N04CLTXG |
40V,433A,0.63mΩ,单N沟道功率MOSFET |
2024-07-18 |
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NTTFS5C680NLTAG |
N沟道功率MOSFET |
2024-07-18 |
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NVMFD5C668NLT1G |
60V,6.5mΩ,68A,N沟道功率MOSFET |
2024-07-18 |
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NVMFD6H852NLT1G |
80V,25.5mΩ,25A,双N沟道功率MOSFET |
2024-07-18 |
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FQP6N80C |
800V,5.5A,N沟道增强型功率MOSFET |
2024-07-18 |
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NVBG040N120M3S |
碳化硅(SiC)MOSFET–EliteSiC,40欧姆,1200V,M3S |
2024-07-18 |
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FDD3690 |
100V,64mΩ,22A,N沟道功率MOSFET |
2024-07-18 |
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FDD86367 |
80V,4.2mΩ,100A,N沟道MOSFET |
2024-07-18 |
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NTMFS7D8N10GTWG |
N沟道屏蔽栅PowerTrench®MOSFET 100V,110A,7.6mΩ |
2024-07-18 |
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FDB2532 |
150V,16mΩ,79A,N沟道PowerTrench® MOSFET |
2024-07-18 |
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FDBL0090N40 |
40V,0.9mΩ,240A,N沟道功率MOSFET |
2024-07-18 |
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FDMT800100DC |
100V,2.95mΩ,162A,N沟道功率MOSFET |
2024-07-18 |
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NTTFS6H860NTAG |
80V,21.1mΩ,33A,单N沟道功率MOSFET |
2024-07-18 |
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NTTFS6H880NTAG |
80V,32mΩ,22A,单N沟道功率MOSFET |
2024-07-18 |
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NVMFS5C420NLT1G |
40V,1mΩ,277A,N沟道功率MOSFET |
2024-07-18 |
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NVTFS5C670NLWFTAG |
60V,6.8mΩ,70A,N沟道功率MOSFET |
2024-07-18 |
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MC3302DR2G |
四电压比较器 |
2024-07-18 |
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BC856BDW1T1G |
双通用晶体管 |
2024-07-18 |
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FDA24N40F |
400V,23A,190mΩ,N沟道FRFET MOSFET |
2024-07-18 |
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NVTFS9D6P04M8LTAG |
9.5mΩ,-40V,P通道功率MOSFET |
2024-07-18 |
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NRVBBS20100CTT4G |
100V,20A肖特基整流二极管 |
2024-06-28 |
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MBRS2040LT3G |
2A,40V肖特基整流器 |
2024-06-28 |
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MMSZ4707T1G |
500mW,SOD123,表面安装齐纳稳压管 |
2024-06-28 |
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SZTVS4201MR6T1G |
TVS二极管 |
2024-06-28 |
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NSS30101LT1G |
30V, 2A, 低VCE(sat) NPN晶体管 |
2024-06-28 |
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1N5337BRLG |
4.7V齐纳电压,5W,硅齐纳稳压二极管 |
2024-06-28 |
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1SMB5944BT3G |
3W,塑料表贴封装,齐纳稳压管 |
2024-06-28 |
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NRVB140SFT1G |
1.0A,40V,肖特基二极管,表贴 |
2024-06-28 |
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NVMFD020N06CT1G |
60V,20.3mΩ,27A,N沟道功率MOSFET |
2024-06-28 |
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NCH-RSL15-512-101WC40-ABG |
控制器 |
2024-06-28 |
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74LCX244MTCX |
带 5V 耐压输入和输出的低压缓冲器/线路驱动器 |
2024-06-19 |
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NC7SP14P5X |
TinyLogic ULP-A逆变器 |
2024-06-19 |
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FXL2SD106BQX |
低电压双电源 6 位电压转换器,带自动方向感应 |
2024-06-19 |
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MC100LVEP111FARG |
2.5V/3.3V 1:10 差分 ECL/PECL/HSTL时钟驱动器 |
2024-06-19 |
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FDC6305N |
20V,2.7A,80mΩ,双N沟道PowerTrench MOSFET |
2024-06-19 |
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ESD7002WTT1G |
ESD保护二极管 |
2024-06-19 |
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FCH023N65S3-F155 |
650V,75A,23mΩ,N沟道功率MOSFET |
2024-06-19 |
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NVMFS5113PLWFT1G |
−60V,14mΩ,-64A,P沟道功率MOSFET |
2024-06-19 |
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FDN302P |
55mΩ,-20V,-2.4A,P沟道功率MOSFET |
2024-06-19 |
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NCV2903DMR2G |
低失调电压,2比较器 |
2024-06-19 |
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NCP3065MNTXG |
为LED提供恒定电流的开关稳压器 |
2024-06-19 |
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MBRM2H100T3G |
表面贴装肖特基功率整流管 |
2024-06-19 |
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NTHL065N65S3F |
650V,46A,65mΩ,N沟道SUPERFET功率MOSFET |
2024-06-19 |
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SZMMBZ39VCLT1G |
双共阴极齐纳二极管 |
2024-06-19 |
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NSS1C301ET4G |
3A,100V,低VCE(sat)NPN晶体管 |
2024-06-19 |
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NCV33035DWR2G |
无刷直流电机控制器 |
2024-06-19 |
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MC33269DTRKG |
800 mA,输出可调的低压差稳压器 |
2024-06-19 |
|
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NRVTSM260EV2T1G |
沟槽肖特基整流器 2A,60V |
2024-06-19 |
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FDS8858CZ |
30V双N和P沟道PowerTrench MOSFET |
2024-06-19 |
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FL3100TMPX |
具有LED PWM调光控制的低侧栅极驱动器 |
2024-06-19 |
|
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NCV308SN500T1G |
低静态电流,可编程延迟时间监控电路 |
2024-06-19 |
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NC7SZ04P5X |
TinyLogic UHS 逆变器 |
2024-06-19 |
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FODM8801AR2 |
高温光电晶体管光电耦合器 |
2024-06-19 |
|
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FAN8811TMPX |
高频率,高压侧和低压侧门极驱动集成电路 |
2024-06-19 |
|
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MC74HCT595ADG |
8位移位寄存器,三态输出,TTL |
2024-06-19 |
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FFSD1065A |
650V,10A,碳化硅肖特基二极管 |
2024-06-04 |
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NDSH40120CDN |
碳化硅(SiC)肖特基二极管–EliteSiC,40 A,1200 V,D3,TO-247-3L |
2024-06-04 |
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NRVB0540T3G |
40V,0.5A,表贴式肖特基功率整流器 |
2024-06-04 |
|
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NRVB30H100MFST3G |
30A 100V肖特基二极管 |
2024-06-04 |
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NRVB8H100MFSWFT1G |
8A 100V肖特基二极管 |
2024-06-04 |
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NRVBB20100CTT4G |
100V,20A肖特基整流二极管 |
2024-06-04 |
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NRVBM120ET1G |
表面安装肖特基功率整流器20 V 1A |
2024-06-04 |
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AFGHL50T65SQ |
IGBT 650V 80A |
2024-06-04 |
|
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AFGHL50T65SQD |
650V, 50A,IGBT |
2024-06-04 |
|
|
NTBG022N120M3S |
1200V,30mΩ,72A,N沟道功率MOSFET |
2024-06-04 |
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|
NTBL045N065SC1 |
650V,50mΩ,73A,N沟道功率MOSFET |
2024-06-04 |
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NTD360N65S3H |
650V,360mΩ,10A,N 沟道功率 MOSFET |
2024-06-04 |
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NTHL080N120SC1A |
1200V,110mΩ,31A,N沟道碳化硅MOSFET |
2024-06-04 |
|
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NTMFS002N10MCLT1G |
100V,2.8mΩ,175A,N沟道功率MOSFET |
2024-06-04 |
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NTMFS008N12MCT1G |
120V,8mΩ,79A,N沟道功率MOSFET |
2024-06-04 |
|
|
RURD4120S9A-F085 |
超快二极管,1200V,4A |
2024-06-04 |
|
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ESD7551N2T5G |
微型封装ESD保护二极管 |
2024-06-04 |
|
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MBR120LSFT3G |
肖特基功率整流管,SM,1A,20V |
2024-06-04 |
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NRVUS230T3G |
300V,2A超快恢复功率整流器 |
2024-06-04 |
|
|
NCV7720DQAR2G |
十沟道半桥驱动器 |
2024-06-04 |
|
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NTMFS6H824NT1G |
80V,4.5mΩ,107A,N沟道功率MOSFET |
2024-06-04 |
|
|
NTMT061N60S5F |
600V,61mΩ,41A,N沟道功率MOSFET |
2024-06-04 |
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NTMTSC4D2N10GTXG |
100V,4.2mΩ,178A,N沟道功率MOSFET |
2024-06-04 |
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NTTFD018N08LC |
80V,18mΩ,26A,双N沟道功率MOSFET |
2024-06-04 |
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NTTFS2D1N04HLTWG |
40V,2.1mΩ,150A,N沟道功率MOSFET |
2024-06-04 |
|
|
NVB125N65S3 |
650V,125mΩ,24A,N沟道功率MOSFET |
2024-06-04 |
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NVBG020N120SC1 |
1200V,28mΩ,98A,N沟道碳化硅MOSFET |
2024-06-04 |
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NVBG022N120M3S |
1200V,30mΩ,100A,N沟道SIC MOSFET |
2024-06-04 |
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NVMFS4C03NT1G |
30V,1.7mΩ,159A,N沟道功率 MOSFET |
2024-06-04 |
|
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NVMFS5C442NAFT1G |
40V,2.3m,140A单N沟道功率MOSFET |
2024-06-04 |
|
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NVMFS5C456NLWFAFT1G |
40V,3.7mΩ,87A,N沟道功率MOSFET |
2024-06-04 |
|
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NVMFS6H800NLWFT1G |
80V,1.9mΩ,224A,N沟道功率MOSFET |
2024-06-04 |
|
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NVMFS6H818NWFT1G |
80 V,3.7 mΩ,123 A,N沟道功率MOSFET |
2024-06-04 |
|
|
NVMFS6H858NLT1G |
80V,19.5mΩ,30A,单N沟道功率MOSFET |
2024-06-04 |
|
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NVMTS1D2N08H |
80V,1.1mΩ,337A,单N沟道功率MOSFET |
2024-06-04 |
|
|
NVMYS010N04CLTWG |
40V,10.3mΩ,38A,N沟道功率MOSFET |
2024-06-04 |
|
|
NVTFS5C453NLTAG |
40V,3.1mΩ,107A,N沟道功率MOSFET |
2024-06-04 |
|
|
NVTFS5C460NLWFTAG |
40V,4.8mΩ,74A,N沟道功率MOSFET |
2024-06-04 |
|
|
NVTFS5C670NLTAG |
60V,6.8mΩ,70A,N沟道功率MOSFET |
2024-06-04 |
|
|
NCV7725DQBR2G |
10通道半桥驱动器 |
2024-06-04 |
|
|
H11G1M |
高压达林顿晶体管输出光电耦合器 |
2024-06-04 |
|
|
MBR120LSFT3G |
肖特基功率整流管,SM,1A,20V |
2024-06-04 |
|
|
NRVUS230T3G |
300V,2A超快恢复功率整流器 |
2024-06-04 |
|
|
FFSH5065B-F085 |
汽车碳化硅(SiC)肖特基二极管,650 V |
2024-05-07 |
|
|
NTMJS2D5N06CLTWG |
60V,2.4mΩ,164A,N沟道功率MOSFET |
2024-05-07 |
|
|
NTMTS1D5N08H |
80V,1.5mΩ,255A,N沟道功率MOSFET |
2024-05-07 |
|
|
NVHL050N65S3F |
650V,50mΩ,58A,N沟道功率MOSFET |
2024-05-07 |
|
|
NVMFS5C420NLWFT1G |
40V,1mΩ,277A,N沟道功率MOSFET |
2024-05-07 |
|
|
NCV7685DQR2G |
12通道60mA LED线性电流驱动器I2C可控 |
2024-05-07 |
|
|
NVDSH50120C |
碳化硅肖特基二极管,1200V,50A |
2024-05-07 |
|
|
NVMFD5C446NLWFT1G |
40V,2.65mΩ,145A,N沟道功率MOSFET |
2024-05-07 |
|
|
NCP81075MTTXG |
180V,4A高低侧栅极驱动器 |
2024-05-07 |
|
|
NCP12510CSN65T1G |
用于离线电源的电流模式PWM控制器,65KHz |
2024-05-07 |
|
|
NVH4L070N120M3S |
1200V,87mΩ,34A,N沟道功率MOSFET |
2024-04-12 |
|
|
NCS214RSQT2G |
26V,双向电流检测放大器,低/高侧电压输出 |
2024-04-12 |
|
|
FDMC6679AZ |
-30V,-20A,,P沟道MOSFET |
2024-04-12 |
|
|
FQD2P40TM |
6.5Ω,400V,-1.56A,P沟道功率MOSFET |
2024-04-12 |
|
|
NTTFS5116PLTWG |
-60V,-20A,52mΩ P沟道功率MOSFET |
2024-04-12 |
|
|
NVMFS2D3P04M8LT1G |
2.2mΩ,-40V,-222A,P沟道功率MOSFET |
2024-04-12 |
|
|
NVMS5P02R2G |
-20V,-5.4A,33mΩ P沟道功率MOSFET |
2024-04-12 |
|
|
FDB2552 |
150V,36mΩ,37A,N沟道功率MOSFET |
2024-04-12 |
|
|
FDBL9401-F085T6 |
40V,0.67mΩ,240A,N沟道功率MOSFET |
2024-04-12 |
|
|
FDMS2D5N08C |
80V,2.7mΩ,166A,N沟道功率MOSFET |
2024-04-12 |
|
|
SZ1SMB5923BT3G |
8.2V,3.0W齐纳稳压管 |
2024-04-12 |
|
|
SZMM5Z6V8T5G |
齐纳二极管 |
2024-04-12 |
|
|
SZMMSZ5267BT1G |
500mW齐纳二极管 |
2024-04-12 |
|
|
NCP302LSN47T1G |
带可编程延迟的电压检测器系列 |
2024-04-12 |
|
|
NVTFS4C05NTAG |
30V,102A,3.6mΩ,单N沟道功率MOSFET |
2024-04-12 |
|
|
NVMFD5C462NT1G |
40V、5.4mΩ、70A、N 沟道功率 MOSFET |
2024-04-12 |
|
|
NRVBM2H100T3G |
2A,100V肖特基功率整流器 |
2024-04-12 |
|
|
NVTFS004N04CTAG |
40V,77A,4.9mΩ,单N沟道功率MOSFET |
2024-04-12 |
|
|
NCV7344AD10R2G |
CAN FD收发器,高速低功耗 |
2024-04-12 |
|
|
SZMMSZ4702T1G |
15V齐纳稳压管 |
2024-04-12 |
|
|
NVMFS5C420NWFT1G |
40V,1.1mΩ,268A,N沟道功率MOSFET |
2024-04-12 |
|
|
NIS5420MT4TXG |
电子保险丝 (eFuse), 12V, 44 mΩ, 4A, ISENSE |
2024-04-12 |
|
|
FAN7081MX-GF085 |
单高压侧门极驱动器 |
2024-04-12 |
|
|
H11G1M |
高压达林顿晶体管输出光电耦合器 |
2024-04-12 |
|
|
NC7ST04M5X |
HST逆变器 |
2024-04-12 |
|
|
NTTFS4937NTWG |
N沟道功率MOSFET,30V,75A,4.5mΩ |
2024-04-12 |
|
|
SZMMBZ12VALT1G |
12V双路共阳齐纳二极管TVS |
2024-04-12 |
|
|
SZMMSZ10T1G |
500mW,10V,±5%齐纳稳压管 |
2024-04-12 |
|
|
NCV7708FDQR2G |
双六角驱动器 |
2024-04-12 |
|
|
MC14044BDR2G |
4 R-S锁存器 |
2024-03-15 |
|
|
NCS37010MNTWG |
带自检与锁定的接地故障断路器 |
2024-03-15 |
|
|
NVMFS5C430NWFAFT1G |
40V,1.7mΩ,185A,单N沟道功率MOSFET |
2024-03-15 |
|
|
NVMFS4C01NT1G |
30V,370A,0.67mΩ,单N通道逻辑电平功率MOSFET |
2024-03-15 |
|
|
FDD86569-F085 |
60V,90A,5.7mΩ,N沟道功率Trench MOSFET |
2024-03-15 |
|
|
FAD7191M1X |
600V,4.5A,高侧和低侧汽车栅极驱动器IC |
2024-03-15 |
|
|
NRVTS2H60ESFT3G |
沟槽肖特基整流器,极低漏电流 2A,60V |
2024-03-15 |
|
|
NTH4L014N120M3P |
1200V,127A,N沟道碳化硅MOSFET |
2024-03-15 |
|
|
FDMS8320L |
40V,248A,1.1mΩ,N沟道功率MOSFET |
2024-03-15 |
|
|
FDS4935A |
双P沟道,PowerTrench® MOSFET,- 30V,-7A,23mΩ |
2024-03-15 |
|
|
74AC04MTCX |
反相器 |
2024-03-15 |
|
|
NC7ST08P5X |
TinyLogic HST 2 输入 AND 门极 |
2024-03-15 |
|
|
NC7S14M5X |
TinyLogic HS 逆变器 |
2024-03-15 |
|
|
FDY102PZ |
500mΩ,-20V,-0.83A,P沟道功率MOSFET |
2024-02-29 |
|
|
FDC610PZ |
42mΩ,-30V,-4.9A,P 沟道功率 MOSFET |
2024-02-29 |
|
|
NTH4L014N120M3P |
1200V,127A,N沟道碳化硅MOSFET |
2024-02-29 |
|
|
NVBG070N120M3S |
碳化硅(SiC)MOSFET,70 mohm,1200 V,M3S,D2PAK-7L |
2024-02-29 |
|
|
NVMFS5C410NWFAFT1G |
40V,300A,0.92mΩ,N沟道功率MOSFET |
2024-02-29 |
|
|
NCV7708FDQR2G |
双六角驱动器 |
2024-02-29 |
|
|
NCV6324CMTAATBG |
同步Buck转换器,3 MHz,2.0 A |
2024-02-29 |
|
|
6N135M |
高速晶体管光耦合器 |
2024-02-29 |
|
|
NCV4296-2CSN33T1G |
30mA低压差稳压器3.3V |
2024-02-29 |
|
|
NVTFS4C06NTAG |
30V,71A,4.2mΩ,单N沟道功率MOSFET |
2023-12-27 |
|
|
FDG6332C |
20V,N&P沟道Power Trench MOSFET |
2023-12-27 |
|
|
FGH60T65SHD-F155 |
IGBT,650V,60A |
2023-12-27 |
|
|
NVMFS5C410NLWFAFT1G |
40V,330A,0.82mΩ,N沟道功率MOSFET |
2023-12-27 |
|
|
NVMFS5C442NLAFT1G |
40V,130A,2.5mΩ,N沟道功率MOSFET |
2023-12-27 |
|
|
NCV8703MX33TCG |
LDO稳压器,低压降,超低Iq噪声,300mA,3.3V |
2023-12-27 |
|
|
NVMFS5C426NLT1G |
40V,1.2mΩ,237A,N沟道功率MOSFET |
2023-12-13 |
|
|
NVMJS0D9N04CLTWG |
40V,0.82mΩ,330A,单N沟道功率MOSFET |
2023-12-13 |
|
|
NCV21871SN2T1G |
零漂移运算放大器 |
2023-12-13 |
|
|
NVMFS5C410NWFAFT3G |
40V,0.92mΩ,300A,N沟道功率MOSFET |
2023-12-13 |
|
|
LM2901VDTBR2G |
四电压比较器 |
2023-12-13 |
|
|
FDC5612 |
60V,4.3A,55mΩ,N沟道功率Trench MOSFET |
2023-12-13 |
|
|
74ACT138SCX |
8选1译码器/多路分配器 |
2023-12-13 |
|
|
FDMS8333L |
40V,76A,3.1mΩ,N沟道功率Trench MOSFET |
2023-12-13 |
|
|
NVH4L045N065SC1 |
650V,50mΩ,55A,N沟道碳化硅MOSFET |
2023-12-13 |
|
|
NJV4031NT1G |
双极功率晶体管NPN硅 |
2023-12-13 |
|
|
74ACT04SC |
六路逆变器 |
2023-11-14 |
|
|
MC100EP139DWG |
3.3V / 5V ECL 2/4分频, 4/5/6分频时钟发生器 |
2023-11-14 |
|
|
NBC12430FAR2G |
3.3V/5V可编程PLL合成时钟发生器 |
2023-11-14 |
|
|
MC74VHC74DTR2G |
双上升沿D触发器(有预置和清除端) |
2023-11-14 |
|
|
NSVMMBTA05LT1G |
60V,500mA,NPN双极型晶体管 |
2023-11-14 |
|
|
FUSB2805MLX |
USB 2.0高速OTG收发器,带ULPI接口 |
2023-11-14 |
|
|
NB4N840MMNR4G |
带CML输出和内部终端的3.3V,2.7Gb/s双差分时钟/数据2x2交点开关 |
2023-11-14 |
|
|
MC79L15ACDR2G |
100mA负电压稳压器 |
2023-11-14 |
|
|
2SC3647T-TD-E |
100V,2A,低饱和NPN晶体管 |
2023-11-14 |
|
|
FDG6335N |
20V,0.7A,0.3Ω,双N沟道PowerTrench MOSFET |
2023-11-14 |
|
|
FDMS86105 |
100V,26A,34mΩ,N通道屏蔽栅极功率MOSFET |
2023-11-14 |
|
|
SZBZX84C27LT1G |
齐纳二极管 |
2023-11-14 |
|
|
BZG03C15G |
峰值功率600W,齐纳额定浪涌电压调节器 |
2023-11-14 |
|
|
MC33077DR2G |
低噪声四运放 |
2023-11-14 |
|
|
SZBZX84C33LT1G |
齐纳二极管 |
2023-11-14 |
|
|
ES3A |
3.0A,超快速恢复整流器 |
2023-11-14 |
|
|
FDM3622 |
100V,4.4A,60mΩ,N沟道功率MOSFET |
2023-11-06 |
|
|
NCV8412ADDR2G |
具有浪涌电流管理功能的自保护低侧驱动器 |
2023-11-06 |
|
|
74VHC08MX |
四路2输入AND门极 |
2023-10-20 |
|
|
NCV2202SN2T1G |
比较器,低电压,开漏 |
2023-10-20 |
|
|
FGH75T65SHDT-F155 |
IGBT,650V,75A |
2023-10-11 |
|
|
NTH4L075N065SC1 |
碳化硅 (SiC) MOSFET |
2023-10-11 |
|
|
FFSH4065BDN-F085 |
汽车碳化硅(SiC)肖特基二极管,650 V |
2023-10-11 |
|
|
NVH4L080N120SC1 |
1200V,110mΩ,29A,N沟道功率MOSFET |
2023-10-11 |
|
|
S3BB |
表面贴装整流器3A,100V |
2023-10-11 |
|
|
NCV57090BDWR2G |
隔离式大电流栅极驱动器 |
2023-09-27 |
|
|
FDMS8018 |
30V,1.8mΩ,175A,N沟道功率MOSFET |
2023-09-27 |
|
|
FGHL50T65MQDT |
IGBT - 650 V 50 A |
2023-09-27 |
|
|
NVBG015N065SC1 |
650V、12mΩ、145A、N 沟道功率 MOSFET |
2023-09-06 |
|
|
NTBG014N120M3P |
1200V,N沟道碳化硅MOSFET |
2023-09-06 |
|
|
NRVBS360BNT3G |
肖特基功率整流器,60 V 4A |
2023-09-06 |
|
|
NCD57001DWR2G |
隔离高电流IGBT栅极驱动器 |
2023-09-06 |
|
|
MC10EP451FAG |
5V,ECL,8位移位寄存器 |
2023-07-18 |
|
|
2N4401TA |
40V,0.6A,625mW,NPN双极型晶体管 |
2023-07-18 |
|
|
NCV7535DBR2G |
SPI控制的H桥和双半桥预驱动器 |
2023-07-18 |
|
|
NCV78723MW2R2G |
高效率, 双降压LED驱动器 |
2023-06-28 |
|
|
NTH4L025N065SC1 |
碳化硅 (SiC) MOSFET |
2023-06-28 |
|
|
NTH4L028N170M1 |
碳化硅 (SiC) MOSFET |
2023-06-28 |
|
|
NTHL025N065SC1 |
650V,28.5mΩ,99A,N沟道碳化硅MOSFET |
2023-06-28 |
|
|
NCV21871SN2T1G |
零漂移运算放大器 |
2023-06-28 |
|
|
LP2950CZ-3.3G |
100mA,低功耗低压差稳压器 |
2023-05-24 |
|
|
NCV7383DB0R2G |
10Mb/s,单通道FlexRay收发器 |
2023-05-24 |
|
|
FDP032N08 |
75V,235A,3.2mΩ,N通道功率MOSFET |
2023-05-24 |
|
|
NCV7703CD2R2G |
三重半桥驱动器,用于汽车侧视镜控制 |
2023-05-06 |
|
|
NLV37WZ04USG |
三重逆变器 |
2023-05-06 |
|
|
NCP45540IMNTWG-H |
负载开关 |
2023-05-06 |
|
|
SZMM5Z4V3T1G |
齐纳二极管,4.3V,500mW |
2023-05-06 |
|
|
NCV8163ASN280T1G |
LDO稳压器,250 mA |
2023-05-06 |
|
|
FSGM300N |
用于30W离线反激式转换器650V集成电源开关 |
2023-04-20 |
|
|
FGD3245G2-F085 |
IGBT, 450V, 23A |
2023-04-20 |
|
|
FFSD0665B-F085 |
碳化硅(SiC)肖特基二极管,6A,650V |
2023-04-20 |
|
|
LP2950CZ-3.3RAG |
100mA低压差稳压器 |
2023-04-20 |
|
|
NTH4L025N065SC1 |
碳化硅 (SiC) MOSFET |
2023-04-20 |
|
|
FDP032N08 |
75V,235A,3.2mΩ,N通道功率MOSFET |
2023-03-21 |
|
|
FDC6401N |
20V,3A,70mΩ双N沟道Power MOSFET |
2023-03-09 |
|
|
AR0130CSSM00SPCA0-DPBR |
CMOS图像传感器1.2MP |
2023-03-09 |
|
|
NTZD3154NT5G |
20V,540mA,双N沟道小信号MOSFET |
2023-03-09 |
|
|
NVMTS1D1N04CTXG |
40V,1.1mΩ,277A,N沟道功率MOSFET |
2023-02-14 |
|
|
FPF2495CUCX |
负载开关 |
2023-02-14 |
|
|
MC74LCX244MNTWG |
八路缓冲器,同相,低压,三态 |
2023-02-14 |
|
|
NCV81599MWTXG |
I2C 可配置、4 开关降压升压控制器 |
2023-02-14 |
|
|
NVMFSC1D6N06CL |
60 V,1.5 mΩ,224 A,N沟道功率MOSFET |
2023-02-14 |
|
|
NVMFS5H610NLWFT1G |
60V,10 mΩ,48 A,N沟道功率MOSFET |
2023-02-14 |
|
|
NVMTS001N06CLTXG |
60V,0.81mΩ,N沟道功率MOSFET |
2023-02-14 |
|
|
NRTS3060MFST3G |
30A、60V高性能沟槽肖特基整流器 |
2023-02-14 |
|
|
FPF2595UCX |
负载开关 |
2023-02-14 |
|
|
74ACT04MTCX |
六路反相器 |
2023-02-03 |
|
|
NVH4L080N120SC1 |
1200V,110mΩ,29A,N沟道功率MOSFET |
2023-02-03 |
|
|
NVBG060N090SC1 |
900V,84mΩ,44A,N沟道碳化硅MOSFET |
2023-02-03 |
|
|
FDMS4D0N12C |
120V,114A,4.4mΩ,N通道屏蔽栅极功率MOSFET |
2023-02-03 |
|
|
FPF2286UCX |
具有极低导通电阻的OVP,28 V,4 A |
2022-12-28 |
|
|
NCV8843MNR2G |
具有同步能力的1.5A, 340kHz, 降压稳压器 |
2022-12-06 |
|
|
MC100EP11DR2G |
3.3V/5V,ECL,1:2差分输出缓冲器 |
2022-12-06 |
|
|
MC100EP01DG |
3.3V / 5V ECL 4输入或/或非门 |
2022-12-06 |
|
|
NCP380HSN05AAT1G |
固定/可调电流限制配电开关 |
2022-12-06 |
|
|
NCP715SQ25T2G |
50mA,2.5V固定输出,LDO线性稳压器 |
2022-12-06 |
|
|
FAN3224TUMX-F085 |
低侧栅极驱动器,双4A高速驱动器 |
2022-12-06 |
|
|
ES1G |
快速恢复整流器,400V,1A |
2022-12-06 |
|
|
NTMFS5C410NT1G |
40V,300A,0.92mΩ,单N沟道功率MOSFET |
2022-12-06 |
|
|
NVH4L045N065SC1 |
650V,50mΩ,55A,N沟道碳化硅MOSFET |
2022-11-16 |
|
|
NRVFES6J |
超快整流器 |
2022-11-16 |
|
|
1N4745A-T50A |
齐纳二极管 1W 5% |
2022-11-16 |
|
|
MM5Z6V2T5G |
标准容差齐纳二极管稳压器 |
2022-11-16 |
|
|
SBAT54CWT1G |
30V双路共阴肖特基二极管 |
2022-11-16 |
|
|
SZBZX84C15LT3G |
225mW,15V,±5%齐纳稳压管 |
2022-11-16 |
|
|
NCP1680ABD1R2G |
(CrM) 功率因数校正控制器 |
2022-11-16 |
|
|
M74VHC1GT126DF2G |
非反相缓冲器 |
2022-10-18 |
|
|
NTH4L060N065SC1 |
650V,70mΩ,47A,N沟道功率MOSFET |
2022-10-18 |
|
|
AR0237CSSC12SPRA0-DR |
CMOS图像传感器,2.1MP |
2022-09-20 |
|
|
FUSB251UCX |
Type-C CC和SBU保护集成电路 |
2022-09-20 |
|
|
FXMAR2102UMX |
适合I2C应用的双电源2位电压转换器/隔离器 |
2022-09-20 |
|
|
MMBTA06LT3G |
NPN 双极晶体管 |
2022-09-20 |
|
|
SMBT3906DW1T1G |
双 PNP 双极晶体管 |
2022-09-20 |
|
|
SMMBT3904LT3G |
NPN 双极晶体管 |
2022-09-20 |
|
|
SMMBT3906LT3G |
PNP 双极晶体管 |
2022-09-20 |
|
|
FDT86102LZ |
100V,6.6A,28mΩ,N沟道功率MOSFET |
2022-09-20 |
|
|
NTMFD016N06CT1G |
60 V、16.3 mΩ、32 A、N 沟道功率 MOSFET |
2022-09-20 |
|
|
NTMTS6D0N15MC |
150V、135A、6.4mΩ、N沟道功率MOSFET |
2022-09-20 |
|
|
MMBD1504A |
高导通低漏二极管 |
2022-08-29 |
|
|
NCS199A3RSQT2G |
电压输出电流分流监控器,26V |
2022-08-22 |
|
|
SZMMSZ4707T1G |
20V低电流齐纳二极管 |
2022-07-12 |
|
|
NCP303152MNTWG |
具有集成电流监控器的集成驱动器和MOSFET |
2022-06-23 |
|
|
NCP1680ABD1R2G |
(CrM) 功率因数校正控制器 |
2022-06-23 |
|
|
NCP164AMT120TAG |
LDO稳压器,300mA |
2022-01-07 |
|
|
BZX79C3V9-T50A |
齐纳二极管,0.5W 5% |
2021-08-23 |
|
|
AR0144CSSC20SUKA0-CPBR |
CMOS图像传感器,数字,全局快门,1MP |
2021-08-02 |
|
|
NTBS9D0N10MC |
100V,9mΩ,60A,N沟道功率MOSFET |
2021-08-02 |
|
|
FCPF650N80Z |
800V,650mΩ,10A,N沟道功率MOSFET |
2021-08-02 |
|
|
NV25640DWHFT3G |
EEPROM串行64Kb SPI-汽车级0 |
2021-06-07 |
|
|
BC858CMTF |
310mW,PNP外延硅晶体管 |
2020-05-28 |
|
|
ESD7351XV2T1G |
3.3V,150mW,ESD保护二极管 |
2020-05-28 |
|
|
1N4740ATR |
齐纳二极管,10V 1W 5% |
2020-05-28 |
|
|
CAT24C512HU5IGT3 |
512K,I2C串行存储器 |
2020-05-21 |
|
|
CAV24C32YE-GT3 |
32Kb,I2C CMOS串行EEPROM |
2020-05-21 |
|
|
CAV93C76VE-GT3 |
汽车级8Kb微线串行EEPROM |
2020-05-21 |
|
|
MC100EP52DR2G |
ECL,差分D触发器 |
2020-01-07 |
|
|
MMBT100 |
NPN通用放大器 |
2020-01-07 |
|
|
NTSAF545T3G |
沟槽肖特基整流器,低正向电压,45V,5A |
2020-01-07 |
|
|
NRVHP820MFDT1G |
200V,超快恢复双模整流器 |
2019-12-26 |
|
|
FDMS3D5N08LC |
80V,136A,3.5mΩ,单N通道功率MOSFET |
2019-12-10 |
|
|
FDPF4D5N10C |
100V, 128A,4.5mΩ,N通道PowerMOSFET |
2019-12-10 |
|
|
FDPF8D5N10C |
100V,76A,8.5mΩ,N沟道屏蔽栅极功率MOSFET |
2019-12-10 |
|
|
NTB110N65S3HF |
650V,30A,110mΩ,N沟道SUPERFET III MOSFET |
2019-12-10 |
|
|
NTTFS5C453NLTWG |
40V,107A,3mΩ,N沟道功率MOSFET |
2019-12-10 |
|
|
SZ1SMA5936BT3G |
30V,1.5W齐纳稳压管 |
2019-12-10 |
|
|
SZMM3Z43VT1G |
300mW,43V,±5%齐纳稳压管 |
2019-12-10 |
|
|
FCPF20N60 |
600V,190mΩ,20A,N通道功率MOSFET |
2019-11-01 |
|
|
74LVC06ADR2G |
具有漏极开路输出和5V容差低压六路反向器 |
2019-11-01 |
|
|
NSVF5488SKT3G |
用于低噪声放大器的RF晶体管 |
2019-10-10 |
|
|
SZMMSZ5233BT1G |
500mW,齐纳二极管 |
2019-09-19 |
|
|
NSVBAS20LT3G |
200V开关二极管 |
2019-09-19 |
|
|
ESDU3121MXT5G |
12V单向ESD保护器件 |
2019-09-19 |
|
|
ESD8704MUTAG |
单向高速数据线保护 |
2019-09-19 |
|
|
NSVMMUN2233LT3G |
NPN双极数字晶体管(BRT) |
2019-09-19 |
|
|
SZBZX84B5V6LT1G |
225mW,5.6V,±2%齐纳稳压管 |
2019-09-03 |
|
|
SZMMBZ15VAWT1G |
40W,15V,齐纳保护二极管 |
2019-09-03 |
|
|
SZMMSZ27T1G |
500mW,27V,±5%,齐纳稳压管 |
2019-09-03 |
|
|
SZMMSZ4704T1G |
17V低电流齐纳二极管电压稳压器 |
2019-09-03 |
|
|
FGH75T65SQDNL4 |
650V,75A,隔离门双极晶体管(IGBT),场截止型 |
2019-08-16 |
|
|
FFSB1065A |
-650V,10A,碳化硅(SIC)肖特基二极管 |
2019-08-16 |
|
|
FFSD0665A |
-650V,6A,碳化硅肖特基二极管 |
2019-08-16 |
|
|
FQA13N80-F109 |
800V,12.6A,750mΩ,N沟道 QFET MOSFET |
2019-07-22 |
|
|
NTMFS4C024NT1G |
30V,78A,2.8mΩ,N沟道功率MOSFET |
2019-07-22 |
|
|
FCP20N60 |
600V,190mΩ,20A,N通道功率MOSFET |
2019-07-22 |
|
|
FDP4D5N10C |
100V,128A,4.5mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
|
|
FCH125N65S3R0-F155 |
650V,24A,125mΩ,N沟道功率MOSFET |
2019-06-14 |
|
|
FCP260N65S3 |
650V,12A,260mΩ,N沟道功率MOSFET |
2019-06-14 |
|
|
LC823450XDTBG |
低功耗,高分辨率音频处理片上系统(SoC) |
2019-03-28 |
|
|
NCS2252SQ2T2G |
50ns,高速低压,轨到轨,漏极开路比较器 |
2019-03-28 |
|
|
NCP134AMX110TCG |
具有偏置轨和极低压差的LDO稳压器 |
2019-03-28 |
|
|
NCV8605MN18T2G |
1.8V,低压差稳压器带ESD保护 |
2019-03-28 |
|
|
NCV431ASNT1G |
低电压精密可调分流稳压器 |
2019-03-28 |
|
|
FAN7711MX |
镇流器控制集成电路 |
2018-12-27 |
|
|
NB3N2304NZMNR4G |
1:4时钟/数据扇出缓冲器 |
2018-12-14 |
|
|
NCV431BSNT1G |
低电压精密可调分流稳压器 |
2018-11-01 |
|
|
NCP1340B5D1R2G |
具有谷锁定切换功能的高电压准谐振控制器 |
2018-11-01 |
|
|
FFSH20120ADN-F085 |
1200V,20A,碳化硅肖特基二极管 |
2018-11-01 |
|
|
EFC2J013NUZTDG |
12V,17A,5.8mΩ,双N沟道功率MOSFET |
2018-09-21 |
|
|
FOD8314T |
1.0A 输出电流,栅极驱动光耦合器 |
2018-08-23 |
|
|
NSVMUN5314DW1T3G |
互补双极数字晶体管 |
2018-08-23 |
|
|
NVGS4111PT1G |
单P沟道功率MOSFET,-30V,-4.7A |
2018-08-23 |
|
|
NCP135AMT040TBG |
0.5A,0.4V输出低压差稳压器 |
2018-08-23 |
|
|
FFSP1265A |
650V,12A,碳化硅肖特基二极管 |
2018-08-23 |
|
|
NCP114ASN120T1G |
1.2V,300mA,CMOS 低压差稳压器(LDO) |
2018-06-13 |
|
|
SMMBT2369ALT1G |
15V,200mA,NPN双极晶体管 |
2018-06-13 |
|
|
NCP1239BD100R2G |
用于带HV启动的反激式转换器的固定频率电流模式控制器 |
2018-06-13 |
|
|
SZMM3Z13VT1G |
300mW,13V,±5%,齐纳稳压二极管 |
2018-05-10 |
|
|
NB100LVEP221MNRG |
2.5V/3.3V,2:1:20差分,HSTL/ECL/PECL,时钟/数据扇出缓冲器 |
2018-05-04 |
|
|
NSR05F30NXT5G |
30V,0.5A肖特基二极管 |
2018-04-28 |
|
|
NSV1C200MZ4T1G |
100V,2A,PNP型低VCE(sat)晶体管 |
2018-04-28 |
|
|
NCP431BCSNT1G |
基准电压源,低阴极电流,可编程并联稳压器 |
2018-04-28 |
|
|
SZMMSZ5249BT1G |
500mW齐纳二极管 |
2018-04-28 |
|
|
NCV2200SN1T1G |
低电压互补型比较器 |
2018-04-28 |
|
|
NCV303LSN40T1G |
具有可编程延迟N通道输出的电压检测器 |
2018-04-28 |
|
|
NCV8161ASN280T1G |
2.8V输出,450mA超低噪声,高PSRR LDO稳压器 |
2018-03-29 |
|
|
NCV303LSN45T1G |
4.5V电压检测器带可编程延迟 |
2018-03-29 |
|
|
MUN5213DW1T1G |
双偏置电阻晶体管 |
2017-12-15 |
|
|
MMBT2907AM3T5G |
PNP通用型晶体管 |
2017-12-15 |
|
|
NB3V1102CMTTBG |
3.3V/2.5V/1.8V,LVCMOS,低斜率扇出缓冲器 |
2017-12-15 |
|
|
NTTFS4C02NTAG |
30V,2.25mΩ,170A,单N沟道功率MOSFET |
2017-12-15 |
|
|
NCV2211DR2G |
带差分输出/关断模式的低失真音频功率放大器 |
2017-12-15 |
|
|
MC10EP016FAG |
3.3V/5V,ECL,8位同步二进制加法计数器 |
2017-11-23 |
|
|
NCP114ASN150T1G |
1.5V固定输出,300mA,CMOS低压差稳压器 |
2017-11-09 |
|
|
NB7L585MNR4G |
2.5V / 3.3V 差分2:1输入到1:6 LVPECL时钟/数据输出缓冲器/转换器 |
2017-10-19 |
|
|
MC100EP195BFAG |
3.3V ECL,可编程延迟芯片 |
2017-10-10 |
|
|
LM2901EDR2G |
单电源,36V,四通道,比较器 |
2017-09-28 |
|
|
NLHV4157NDFT2G |
负电压SPDT开关 |
2017-09-28 |
|
|
MC33269DR2-5.0G |
800 mA,输出可调的低压差稳压器 |
2017-09-19 |
|
|
LM358EDR2G |
单电源,双路运算放大器 |
2017-09-05 |
|
|
SBC856BWT1G |
-66V,-100mA,PNP型通用双极晶体管 |
2017-09-05 |
|
|
NCS2003ASN2T1G |
单路7MHz,高压摆率,轨到轨输出,运算放大器 |
2017-08-17 |
|
|
NCP81234MNTXG |
具有双回路功能,可配置,DrMOS兼容的多相控制器 |
2017-08-17 |
|
|
CAT24C04HU4I-GT3 |
4Kb,I2C串行EEPROM存储器 |
2017-08-11 |
|
|
N24C02UDTG |
2Kb I2C CMOS串行EEPROM |
2017-07-26 |
|
|
NCS20032DTBR2G |
低电压,轨到轨输出,高压摆率,运算放大器 |
2017-07-26 |
|
|
NCV8160AMX180TBG |
用于射频和模拟电路的1.8V固定输出,250mA,低压差稳压器 |
2017-06-02 |
|
|
NCV8161AMX180TBG |
用于射频和模拟电路的1.8V固定输出,450mA,低压差稳压器 |
2017-06-02 |
|
|
NCV8161AMX280TBG |
用于射频和模拟电路的2.8V固定输出,450mA,低压差稳压器 |
2017-06-02 |
|