产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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FOD8342TR2 |
3A输出电流,高速栅极驱动光电耦合器拉伸体 |
2024-04-12 |
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NLV74HC244ADWR2G |
八路三态同相缓冲器/线路驱动器/线路接收器 |
2024-04-12 |
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NVH4L070N120M3S |
1200V,87mΩ,34A,N沟道功率MOSFET |
2024-04-12 |
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FPF2290BUCX-F130 |
过电压保护负载开关 |
2024-04-12 |
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NCS214RSQT2G |
26V,双向电流检测放大器,低/高侧电压输出 |
2024-04-12 |
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FDMC6679AZ |
-30V,-20A,,P沟道MOSFET |
2024-04-12 |
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FQD2P40TM |
6.5Ω,400V,-1.56A,P沟道功率MOSFET |
2024-04-12 |
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NTTFS5116PLTWG |
-60V,-20A,52mΩ P沟道功率MOSFET |
2024-04-12 |
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NVMFS2D3P04M8LT1G |
2.2mΩ,-40V,-222A,P沟道功率MOSFET |
2024-04-12 |
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NVMS5P02R2G |
-20V,-5.4A,33mΩ P沟道功率MOSFET |
2024-04-12 |
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FDB2552 |
150V,36mΩ,37A,N沟道功率MOSFET |
2024-04-12 |
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FDBL9401-F085T6 |
40V,0.67mΩ,240A,N沟道功率MOSFET |
2024-04-12 |
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FDMS2D5N08C |
80V,2.7mΩ,166A,N沟道功率MOSFET |
2024-04-12 |
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SZ1SMA5943BT3G |
56V,1.5W齐纳稳压管 |
2024-04-12 |
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SZ1SMB5923BT3G |
8.2V,3.0W齐纳稳压管 |
2024-04-12 |
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SZMM5Z6V8T5G |
齐纳二极管 |
2024-04-12 |
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SZMMSZ5267BT1G |
500mW齐纳二极管 |
2024-04-12 |
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NCP302LSN47T1G |
带可编程延迟的电压检测器系列 |
2024-04-12 |
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NVTFS4C05NTAG |
30V,102A,3.6mΩ,单N沟道功率MOSFET |
2024-04-12 |
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NVMFD5C462NT1G |
40V、5.4mΩ、70A、N 沟道功率 MOSFET |
2024-04-12 |
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FDMC86262P |
307mΩ,-105V,-2A,P沟道功率MOSFET |
2024-04-12 |
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NRVBM2H100T3G |
2A,100V肖特基功率整流器 |
2024-04-12 |
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NVTFS004N04CTAG |
40V,77A,4.9mΩ,单N沟道功率MOSFET |
2024-04-12 |
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NCV7344AD10R2G |
CAN FD收发器,高速低功耗 |
2024-04-12 |
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SZMM3Z10VT1G |
200mW,10V,±5%齐纳稳压管 |
2024-04-12 |
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SZMMSZ4702T1G |
15V齐纳稳压管 |
2024-04-12 |
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NVMFS5C420NWFT1G |
40V,1.1mΩ,268A,N沟道功率MOSFET |
2024-04-12 |
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FODM1007R2V |
光电晶体管光耦合器 |
2024-04-12 |
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NCP382HD05AAR2G |
固定限流配电开关 |
2024-04-12 |
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NIS5420MT4TXG |
电子保险丝 (eFuse), 12V, 44 mΩ, 4A, ISENSE |
2024-04-12 |
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FAN7081MX-GF085 |
单高压侧门极驱动器 |
2024-04-12 |
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H11G1M |
高压达林顿晶体管输出光电耦合器 |
2024-04-12 |
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NVMFD5C446NLWFT1G |
40V,2.65mΩ,145A,N沟道功率MOSFET |
2024-04-12 |
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NC7ST04M5X |
HST逆变器 |
2024-04-12 |
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FQD7P20TM |
-200V,-3.6A,P沟道MOSFET |
2024-04-12 |
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NTTFS4937NTWG |
N沟道功率MOSFET,30V,75A,4.5mΩ |
2024-04-12 |
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SZMMBZ12VALT1G |
12V双路共阳齐纳二极管TVS |
2024-04-12 |
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SZBZX84C39ET1G |
225W,39V齐纳二极管 |
2024-04-12 |
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SZBZX84C5V1ET1G |
225W,5.1V齐纳稳压管 |
2024-04-12 |
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SZMM3Z10VT1G |
200mW,10V,±5%齐纳稳压管 |
2024-04-12 |
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SZMM5Z20VT1G |
200mW,20V,±5%齐纳稳压管 |
2024-04-12 |
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SZMMSZ10T1G |
500mW,10V,±5%齐纳稳压管 |
2024-04-12 |
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SZMMSZ4702T1G |
15V齐纳稳压管 |
2024-04-12 |
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NCV7708FDQR2G |
双六角驱动器 |
2024-04-12 |
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MC14044BDR2G |
4 R-S锁存器 |
2024-03-15 |
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NCS37010MNTWG |
带自检与锁定的接地故障断路器 |
2024-03-15 |
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NVMFS5C430NWFAFT1G |
40V,1.7mΩ,185A,单N沟道功率MOSFET |
2024-03-15 |
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NVMFS4C01NT1G |
30V,370A,0.67mΩ,单N通道逻辑电平功率MOSFET |
2024-03-15 |
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FDD86569-F085 |
60V,90A,5.7mΩ,N沟道功率Trench MOSFET |
2024-03-15 |
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FODM3083 |
800V 5mA过零三端双向可控硅开关,MFP |
2024-03-15 |
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FAD7191M1X |
600V,4.5A,高侧和低侧汽车栅极驱动器IC |
2024-03-15 |
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NRVTS2H60ESFT3G |
沟槽肖特基整流器,极低漏电流 2A,60V |
2024-03-15 |
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FDN340P |
70mΩ,-20V,-2A,P沟道功率MOSFET |
2024-03-15 |
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NTH4L014N120M3P |
1200V,127A,N沟道碳化硅MOSFET |
2024-03-15 |
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FDMS8320L |
40V,248A,1.1mΩ,N沟道功率MOSFET |
2024-03-15 |
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FDS4935A |
双P沟道,PowerTrench® MOSFET,- 30V,-7A,23mΩ |
2024-03-15 |
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NVMFS5C420NWFT1G |
40V,1.1mΩ,268A,N沟道功率MOSFET |
2024-03-15 |
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74AC04MTCX |
反相器 |
2024-03-15 |
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NC7ST08P5X |
TinyLogic HST 2 输入 AND 门极 |
2024-03-15 |
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NC7S14M5X |
TinyLogic HS 逆变器 |
2024-03-15 |
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NDS9407 |
150mΩ,-60V -3.0A,单P沟道功率MOSFET |
2024-03-15 |
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FDY102PZ |
500mΩ,-20V,-0.83A,P沟道功率MOSFET |
2024-02-29 |
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FDC610PZ |
42mΩ,-30V,-4.9A,P 沟道功率 MOSFET |
2024-02-29 |
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NTH4L014N120M3P |
1200V,127A,N沟道碳化硅MOSFET |
2024-02-29 |
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NVBG070N120M3S |
碳化硅(SiC)MOSFET,70 mohm,1200 V,M3S,D2PAK-7L |
2024-02-29 |
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NCV1362ACDR2G |
汽车初级侧 PWM 控制器,用于低功率离线 SMPS |
2024-02-29 |
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NVMFS5C410NWFAFT1G |
40V,300A,0.92mΩ,N沟道功率MOSFET |
2024-02-29 |
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NRVTSA4100T3G |
沟槽肖特基整流器,低正向电压,100V,4A |
2024-02-29 |
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NCV7708FDQR2G |
双六角驱动器 |
2024-02-29 |
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NCV6324CMTAATBG |
同步Buck转换器,3 MHz,2.0 A |
2024-02-29 |
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NVH4L160N120SC1 |
1200 V,17.3A,,N沟道功率 MOSFET |
2024-02-29 |
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FFSH20120A-F085 |
1200V,20A,碳化硅肖特基二极管 |
2024-02-29 |
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6N135M |
高速晶体管光耦合器 |
2024-02-29 |
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NCV4296-2CSN33T1G |
30mA低压差稳压器3.3V |
2024-02-29 |
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MC100E131FNG |
5V, ECL,4位D触发器 |
2023-12-27 |
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NVTFS4C06NTAG |
30V,71A,4.2mΩ,单N沟道功率MOSFET |
2023-12-27 |
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FDC86244 |
150V,N沟道Power Trench® MOSFET |
2023-12-27 |
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FQD12N20LTM |
200V,9A,280mΩ,N沟道 QFET MOSFET |
2023-12-27 |
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FDG6332C |
20V,N&P沟道Power Trench MOSFET |
2023-12-27 |
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FGH60T65SHD-F155 |
IGBT,650V,60A |
2023-12-27 |
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NVMFS5C410NLWFAFT1G |
40V,330A,0.82mΩ,N沟道功率MOSFET |
2023-12-27 |
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NVMFS5C442NLAFT1G |
40V,130A,2.5mΩ,N沟道功率MOSFET |
2023-12-27 |
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NCP4545IMNTWG |
集成式负载开关,ecoSWITCH™,10.5 A |
2023-12-27 |
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NCV8703MX33TCG |
LDO稳压器,低压降,超低Iq噪声,300mA,3.3V |
2023-12-27 |
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NVMFS5C426NLT1G |
40V,1.2mΩ,237A,N沟道功率MOSFET |
2023-12-13 |
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NVMJS0D9N04CLTWG |
40V,0.82mΩ,330A,单N沟道功率MOSFET |
2023-12-13 |
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NCV21871SN2T1G |
零漂移运算放大器 |
2023-12-13 |
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NCP81295MNTXG |
50A,热插拔控制器 |
2023-12-13 |
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NVMFS5C410NWFAFT3G |
40V,0.92mΩ,300A,N沟道功率MOSFET |
2023-12-13 |
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LM2901VDTBR2G |
四电压比较器 |
2023-12-13 |
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MM5Z5V1ST1G |
齐纳稳压管 |
2023-12-13 |
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FDC5612 |
60V,4.3A,55mΩ,N沟道功率Trench MOSFET |
2023-12-13 |
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FGH40T65SHD-F155 |
650V,40A IGBT场截止沟槽 |
2023-12-13 |
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74ACT138SCX |
8选1译码器/多路分配器 |
2023-12-13 |
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FDMS8333L |
40V,76A,3.1mΩ,N沟道功率Trench MOSFET |
2023-12-13 |
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NVH4L045N065SC1 |
650V,50mΩ,55A,N沟道碳化硅MOSFET |
2023-12-13 |
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NJV4031NT1G |
双极功率晶体管NPN硅 |
2023-12-13 |
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74ACT04SC |
六路逆变器 |
2023-11-14 |
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BZX84C39LT1G |
225mW SOT-23表面安装齐纳稳压管 |
2023-11-14 |
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ESD5581N2T5G |
5V,10pF,ESD双向保护二极管 |
2023-11-14 |
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MC100EP139DWG |
3.3V / 5V ECL 2/4分频, 4/5/6分频时钟发生器 |
2023-11-14 |
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NBC12430FAR2G |
3.3V/5V可编程PLL合成时钟发生器 |
2023-11-14 |
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FAN4800AUM |
功率因数控制器(PFC)CCM+PWM控制器 |
2023-11-14 |
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MC74VHC74DTR2G |
双上升沿D触发器(有预置和清除端) |
2023-11-14 |
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74FST3257DTR2G |
四2选1数据选择器 |
2023-11-14 |
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NSVMMBTA05LT1G |
60V,500mA,NPN双极型晶体管 |
2023-11-14 |
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2N7002KW |
60V,310mA,1.6Ω,N沟道增强型场效应晶体管 |
2023-11-14 |
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FXL6408UMX |
完全可配置的8位I2C控制的GPIO扩展器 |
2023-11-14 |
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FUSB2805MLX |
USB 2.0高速OTG收发器,带ULPI接口 |
2023-11-14 |
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NB4N840MMNR4G |
带CML输出和内部终端的3.3V,2.7Gb/s双差分时钟/数据2x2交点开关 |
2023-11-14 |
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MC79L15ACDR2G |
100mA负电压稳压器 |
2023-11-14 |
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2SC3647T-TD-E |
100V,2A,低饱和NPN晶体管 |
2023-11-14 |
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FDG6335N |
20V,0.7A,0.3Ω,双N沟道PowerTrench MOSFET |
2023-11-14 |
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FDMS86105 |
100V,26A,34mΩ,N通道屏蔽栅极功率MOSFET |
2023-11-14 |
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SZBZX84C27LT1G |
齐纳二极管 |
2023-11-14 |
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BZG03C15G |
峰值功率600W,齐纳额定浪涌电压调节器 |
2023-11-14 |
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NLSX5014MUTAG |
4位100Mb/s 可配置双供电电平转换器 |
2023-11-14 |
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MC33077DR2G |
低噪声四运放 |
2023-11-14 |
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SZBZX84C33LT1G |
齐纳二极管 |
2023-11-14 |
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ES3A |
3.0A,超快速恢复整流器 |
2023-11-14 |
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FDM3622 |
100V,4.4A,60mΩ,N沟道功率MOSFET |
2023-11-06 |
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NCV8412ADDR2G |
具有浪涌电流管理功能的自保护低侧驱动器 |
2023-11-06 |
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FSL206MRN |
650V集成电源开关,用于7W离线反激转换器 |
2023-11-06 |
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NSVBC858CLT1G |
PNP 双极晶体管 |
2023-11-06 |
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FDD120AN15A0-F085 |
150 V、14 A、90 mΩ,N沟道功率MOSFET |
2023-11-06 |
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LMV358DMR2G |
单/双/四路,低电压轨对轨运算放大器 |
2023-10-20 |
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CM1224-04MR |
2-和4-通道低电容ESD保护阵列 |
2023-10-20 |
|
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74VHC08MX |
四路2输入AND门极 |
2023-10-20 |
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NCV2202SN2T1G |
比较器,低电压,开漏 |
2023-10-20 |
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FAN251015MNTXG |
同步降压稳压器 |
2023-10-20 |
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FGH75T65SHDT-F155 |
IGBT,650V,75A |
2023-10-11 |
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NTH4L075N065SC1 |
碳化硅 (SiC) MOSFET |
2023-10-11 |
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|
FFSH4065BDN-F085 |
汽车碳化硅(SiC)肖特基二极管,650 V |
2023-10-11 |
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NVH4L080N120SC1 |
1200V,110mΩ,29A,N沟道功率MOSFET |
2023-10-11 |
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|
S3BB |
表面贴装整流器3A,100V |
2023-10-11 |
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NSVDTC114YM3T5G |
NPN 双极数字晶体管 (BRT) |
2023-09-27 |
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|
NLV14515BDWR2G |
4 位透明锁存/4-16 线路解码器 |
2023-09-27 |
|
|
NCV57090BDWR2G |
隔离式大电流栅极驱动器 |
2023-09-27 |
|
|
FDMS8018 |
30V,1.8mΩ,175A,N沟道功率MOSFET |
2023-09-27 |
|
|
FGHL50T65MQDT |
IGBT - 650 V 50 A |
2023-09-27 |
|
|
MM74HC373MTCX |
3 态八路 D 型锁存 |
2023-09-27 |
|
|
NVBG015N065SC1 |
650V、12mΩ、145A、N 沟道功率 MOSFET |
2023-09-06 |
|
|
NTBG014N120M3P |
1200V,N沟道碳化硅MOSFET |
2023-09-06 |
|
|
NRVBS360BNT3G |
肖特基功率整流器,60 V 4A |
2023-09-06 |
|
|
NCD57001DWR2G |
隔离高电流IGBT栅极驱动器 |
2023-09-06 |
|
|
NTMFS6H836NT1G |
80V,80A,6.7mΩ,单N沟道功率MOSFET |
2023-09-06 |
|
|
NSVDTC114YM3T5G |
NPN 双极数字晶体管 (BRT) |
2023-09-06 |
|
|
NCV2931ADT5.0RKG |
100mA,可调输出,带有60V负载保护的低压差稳压器 |
2023-07-18 |
|
|
MC10EP451FAG |
5V,ECL,8位移位寄存器 |
2023-07-18 |
|
|
2N4401TA |
40V,0.6A,625mW,NPN双极型晶体管 |
2023-07-18 |
|
|
NCV7535DBR2G |
SPI控制的H桥和双半桥预驱动器 |
2023-07-18 |
|
|
1N4733A |
齐纳二极管 1W 5% |
2023-07-18 |
|
|
NLV14515BDWR2G |
4 位透明锁存/4-16 线路解码器 |
2023-07-18 |
|
|
CAT4109V-GT2 |
带有独立PWM调光的3通道恒流RGB LED驱动器 |
2023-06-28 |
|
|
NCV78723MW2R2G |
高效率, 双降压LED驱动器 |
2023-06-28 |
|
|
NTH4L025N065SC1 |
碳化硅 (SiC) MOSFET |
2023-06-28 |
|
|
NTH4L028N170M1 |
碳化硅 (SiC) MOSFET |
2023-06-28 |
|
|
NTHL025N065SC1 |
650V,28.5mΩ,99A,N沟道碳化硅MOSFET |
2023-06-28 |
|
|
NCV21871SN2T1G |
零漂移运算放大器 |
2023-06-28 |
|
|
LP2950CZ-3.3G |
100mA,低功耗低压差稳压器 |
2023-05-24 |
|
|
NCV7383DB0R2G |
10Mb/s,单通道FlexRay收发器 |
2023-05-24 |
|
|
FDP032N08 |
75V,235A,3.2mΩ,N通道功率MOSFET |
2023-05-24 |
|
|
NCV7703CD2R2G |
三重半桥驱动器,用于汽车侧视镜控制 |
2023-05-06 |
|
|
NLV37WZ04USG |
三重逆变器 |
2023-05-06 |
|
|
NCP45540IMNTWG-H |
负载开关 |
2023-05-06 |
|
|
NCV8705MW33TCG |
LDO 稳压器,500 mA |
2023-05-06 |
|
|
SZMM5Z4V3T1G |
齐纳二极管,4.3V,500mW |
2023-05-06 |
|
|
SZMM5Z13VT1G |
齐纳二极管 |
2023-05-06 |
|
|
NCV8163ASN280T1G |
LDO稳压器,250 mA |
2023-05-06 |
|
|
FSGM300N |
用于30W离线反激式转换器650V集成电源开关 |
2023-04-20 |
|
|
MOC3052SR2VM |
Triac驱动器光电耦合器,6引脚DIP随机相位 |
2023-04-20 |
|
|
FGD3245G2-F085 |
IGBT, 450V, 23A |
2023-04-20 |
|
|
FFSD0665B-F085 |
碳化硅(SiC)肖特基二极管,6A,650V |
2023-04-20 |
|
|
NRVBS4201T3G |
200V,4A,表贴式柔性快恢复肖特基功率整流器 |
2023-04-20 |
|
|
LP2950CZ-3.3RAG |
100mA低压差稳压器 |
2023-04-20 |
|
|
NTH4L160N120SC1 |
1200V, 224mΩ,17.3A,N沟道碳化硅MOSFET |
2023-04-20 |
|
|
NCV8715SQ50T2G |
50mA低压差稳压器,低Iq |
2023-04-20 |
|
|
NTH4L025N065SC1 |
碳化硅 (SiC) MOSFET |
2023-04-20 |
|
|
FDP032N08B-F102 |
80V,3.3mΩ,211A,N沟道功率MOSFET |
2023-03-21 |
|
|
NL7WB66USG |
超小单刀单掷模拟开关 |
2023-03-21 |
|
|
FDP032N08 |
75V,235A,3.2mΩ,N通道功率MOSFET |
2023-03-21 |
|
|
FDG6317NZ |
20V,0.7A,400mΩ,双N沟道功率Trench MOSFET |
2023-03-21 |
|
|
NTHL025N065SC1 |
650V,28.5mΩ,99A,N沟道碳化硅MOSFET |
2023-03-09 |
|
|
FDC6401N |
20V,3A,70mΩ双N沟道Power MOSFET |
2023-03-09 |
|
|
AR0130CSSM00SPCA0-DPBR |
CMOS图像传感器1.2MP |
2023-03-09 |
|
|
NTZD3154NT5G |
20V,540mA,双N沟道小信号MOSFET |
2023-03-09 |
|
|
NVMTS1D1N04CTXG |
40V,1.1mΩ,277A,N沟道功率MOSFET |
2023-02-14 |
|
|
NCV8730BMTW330TBG |
LDO稳压器,150mA,38V |
2023-02-14 |
|
|
NTH4L015N065SC1 |
N沟道碳化硅MOSFET,650V,142A |
2023-02-14 |
|
|
FPF2495CUCX |
负载开关 |
2023-02-14 |
|
|
MC74LCX244MNTWG |
八路缓冲器,同相,低压,三态 |
2023-02-14 |
|
|
74LCX162373MTDX |
锁存器 |
2023-02-14 |
|
|
74ACT00MTCX |
四路 2 输入 NAND 门极 |
2023-02-14 |
|
|
NCV8163AMX120TBG |
线性稳压器 - 正 固定 1 输出 |
2023-02-14 |
|
|
NCV81599MWTXG |
I2C 可配置、4 开关降压升压控制器 |
2023-02-14 |
|
|
NVMFSC1D6N06CL |
60 V,1.5 mΩ,224 A,N沟道功率MOSFET |
2023-02-14 |
|
|
NVMFS5H610NLWFT1G |
60V,10 mΩ,48 A,N沟道功率MOSFET |
2023-02-14 |
|
|
NTMFS5C410NLT3G |
40V,330A,0.82mΩ,N沟道功率MOSFET |
2023-02-14 |
|
|
NVMTS001N06CLTXG |
60V,0.81mΩ,N沟道功率MOSFET |
2023-02-14 |
|
|
NLV17SZ32DFT2G |
单 2 输入 OR 门极 |
2023-02-14 |
|
|
NRTS3060MFST3G |
30A、60V高性能沟槽肖特基整流器 |
2023-02-14 |
|
|
FDMS7670 |
30V,3.8mΩ,21A,N沟道功率 MOSFET |
2023-02-14 |
|
|
FPF2595UCX |
负载开关 |
2023-02-14 |
|
|
NCV59748MWADJTBG |
1.5A,具有偏置导轨的超低压差稳压器 |
2023-02-14 |
|
|
NCV81599MWTXG |
I2C 可配置、4 开关降压升压控制器 |
2023-02-14 |
|
|
74ACT04MTCX |
六路反相器 |
2023-02-03 |
|
|
NSV40501UW3T2G |
NPN低VCE(sat)晶体管,40V,5A |
2023-02-03 |
|
|
NVH4L080N120SC1 |
1200V,110mΩ,29A,N沟道功率MOSFET |
2023-02-03 |
|
|
NVBG060N090SC1 |
900V,84mΩ,44A,N沟道碳化硅MOSFET |
2023-02-03 |
|
|
FDMS4D0N12C |
120V,114A,4.4mΩ,N通道屏蔽栅极功率MOSFET |
2023-02-03 |
|
|
FPF2286UCX |
具有极低导通电阻的OVP,28 V,4 A |
2022-12-28 |
|
|
FDMS015N04B |
40V,100A,1.5mΩ,N沟道功率MOSFET |
2022-12-28 |
|
|
NCV8843MNR2G |
具有同步能力的1.5A, 340kHz, 降压稳压器 |
2022-12-06 |
|
|
MC100EP11DR2G |
3.3V/5V,ECL,1:2差分输出缓冲器 |
2022-12-06 |
|
|
MC100EP01DG |
3.3V / 5V ECL 4输入或/或非门 |
2022-12-06 |
|
|
NCP380HSN05AAT1G |
固定/可调电流限制配电开关 |
2022-12-06 |
|
|
EMI9408MUTAG |
带ESD保护的用于液晶LCD和摄像机的EMI阵列 |
2022-12-06 |
|
|
NCP715SQ25T2G |
50mA,2.5V固定输出,LDO线性稳压器 |
2022-12-06 |
|
|
FAN3224TUMX-F085 |
低侧栅极驱动器,双4A高速驱动器 |
2022-12-06 |
|
|
FL7760AM6X |
模拟/PWM可调光60V输入降压控制器,用于LED照明 |
2022-12-06 |
|
|
ES1G |
快速恢复整流器,400V,1A |
2022-12-06 |
|
|
NTMFS5C410NT1G |
40V,300A,0.92mΩ,单N沟道功率MOSFET |
2022-12-06 |
|
|
NCP81599MNTXG |
4开关降压升压控制器 |
2022-12-06 |
|
|
NLV37WZ04USG |
三重逆变器 |
2022-12-06 |
|
|
NVH4L045N065SC1 |
650V,50mΩ,55A,N沟道碳化硅MOSFET |
2022-11-16 |
|
|
NRVFES6J |
超快整流器 |
2022-11-16 |
|
|
1N4745A-T50A |
齐纳二极管 1W 5% |
2022-11-16 |
|
|
MM5Z6V2T5G |
标准容差齐纳二极管稳压器 |
2022-11-16 |
|
|
SZESD9901MX2WT5G |
ESD保护二极管 |
2022-11-16 |
|
|
SBAT54CWT1G |
30V双路共阴肖特基二极管 |
2022-11-16 |
|
|
SZBZX84C15LT3G |
225mW,15V,±5%齐纳稳压管 |
2022-11-16 |
|
|
NCP1680ABD1R2G |
(CrM) 功率因数校正控制器 |
2022-11-16 |
|
|
NCP81611MNTXG |
4/3/2/1多相降压控制器 |
2022-11-16 |
|
|
SMBT3906DW1T1G |
双 PNP 双极晶体管 |
2022-11-16 |
|
|
SBAT54CWT1G |
30V双路共阴肖特基二极管 |
2022-11-16 |
|
|
M74VHC1GT126DF2G |
非反相缓冲器 |
2022-10-18 |
|
|
NTH4L060N065SC1 |
650V,70mΩ,47A,N沟道功率MOSFET |
2022-10-18 |
|
|
AR0237CSSC12SPRA0-DR |
CMOS图像传感器,2.1MP |
2022-09-20 |
|
|
FUSB251UCX |
Type-C CC和SBU保护集成电路 |
2022-09-20 |
|
|
FXMAR2102UMX |
适合I2C应用的双电源2位电压转换器/隔离器 |
2022-09-20 |
|
|
MMBTA06LT3G |
NPN 双极晶体管 |
2022-09-20 |
|
|
SMBT3906DW1T1G |
双 PNP 双极晶体管 |
2022-09-20 |
|
|
SMMBT3904LT3G |
NPN 双极晶体管 |
2022-09-20 |
|
|
SMMBT3906LT3G |
PNP 双极晶体管 |
2022-09-20 |
|
|
FDT86102LZ |
100V,6.6A,28mΩ,N沟道功率MOSFET |
2022-09-20 |
|
|
NTMFD016N06CT1G |
60 V、16.3 mΩ、32 A、N 沟道功率 MOSFET |
2022-09-20 |
|
|
NTMTS6D0N15MC |
150V、135A、6.4mΩ、N沟道功率MOSFET |
2022-09-20 |
|
|
MMBD1504A |
高导通低漏二极管 |
2022-08-29 |
|
|
NCS199A3RSQT2G |
电压输出电流分流监控器,26V |
2022-08-22 |
|
|
SZMMSZ4707T1G |
20V低电流齐纳二极管 |
2022-07-12 |
|
|
FOD817BS |
4引脚DIP光电晶体管光电耦合器 |
2022-07-12 |
|
|
NCP303152MNTWG |
具有集成电流监控器的集成驱动器和MOSFET |
2022-06-23 |
|
|
NCP1680ABD1R2G |
(CrM) 功率因数校正控制器 |
2022-06-23 |
|
|
NLSX4302EBMUTCG |
两位,双电源电平转换器 |
2022-05-09 |
|
|
NCP164AMT120TAG |
LDO稳压器,300mA |
2022-01-07 |
|
|
NLAS4717MR2G |
4.5Ω高带宽,双SPDT模拟开关 |
2022-01-07 |
|
|
M74VHC1GT32DTT1G |
2输入或门/CMOS逻辑电平移位器 |
2022-01-07 |
|
|
BZX79C3V9-T50A |
齐纳二极管,0.5W 5% |
2021-08-23 |
|
|
AR0144CSSC20SUKA0-CPBR |
CMOS图像传感器,数字,全局快门,1MP |
2021-08-02 |
|
|
NTBS9D0N10MC |
100V,9mΩ,60A,N沟道功率MOSFET |
2021-08-02 |
|
|
NCP1342ANDAAD1R2G |
准谐反激式振控制器 |
2021-08-02 |
|
|
FCPF650N80Z |
800V,650mΩ,10A,N沟道功率MOSFET |
2021-08-02 |
|
|
NV25640DWHFT3G |
EEPROM串行64Kb SPI-汽车级0 |
2021-06-07 |
|
|
NCV8164AML300TCG |
LDO稳压器,300mA,超低噪声,高PSRR |
2021-06-07 |
|
|
NCV8164AML150TCG |
LDO稳压器,300mA |
2021-06-07 |
|
|
NCV8164AML120TCG |
LDO稳压器,300mA,1.2V,超低噪声 |
2021-04-22 |
|
|
NCV8164AML180TCG |
LDO稳压器,300mA,1.8V,超低噪声 |
2021-04-22 |
|
|
NCP164AMT180TAG |
LDO稳压器,300mA |
2021-03-12 |
|
|
NCV8164AML280TCG |
LDO稳压器,300mA,2.8V,超低噪声 |
2021-03-12 |
|
|
NCP164AMTADJTAG |
LDO稳压器,300mA |
2021-03-05 |
|
|
NCP164AMT120TAG |
LDO稳压器,300mA |
2021-03-05 |
|
|
NCV8711ASN300T1G |
LDO稳压器,100mA,18V |
2021-02-19 |
|
|
NCP164AMT280TAG |
LDO稳压器,300mA |
2021-02-19 |
|
|
NCV8711ASN330T1G |
LDO稳压器,100mA,18V,PG |
2021-01-29 |
|
|
NCP711ASNADJT1G |
LDO稳压器,100 mA,18V |
2021-01-29 |
|
|
NCP711ASN300T1G |
LDO稳压器,100mA,18V,PG |
2021-01-29 |
|
|
NCP711BMT500TBG |
LDO稳压器,100mA,18V |
2021-01-29 |
|
|
NCP711BMT330TBG |
LDO稳压器,100mA,18V |
2021-01-29 |
|
|
NCP711BMT300TBG |
LDO稳压器,100mA,18V,1uA IQ,带PG |
2021-01-21 |
|
|
NCP711BMTADJTBG |
LDO稳压器,100mA,18V,带PG |
2021-01-21 |
|
|
NCP711ASN330T1G |
LDO稳压器,100 mA,18 V |
2021-01-13 |
|
|
NCP711ASN500T1G |
LDO稳压器,100mA,18V |
2021-01-13 |
|
|
FSBB15CH60C |
600V,15A,Motion SPM®3系列智能功率模块 |
2020-12-28 |
|
|
NCV8711ASN500T1G |
LDO稳压器,100mA,18V,1uA IQ,带PG |
2020-12-17 |
|
|
NTBG160N120SC1 |
1200V,160mΩ,19.5A,N沟道碳化硅MOSFET |
2020-12-17 |
|
|
FCB125N65S3 |
650V,125mΩ,24A,N沟道功率MOSFET |
2020-12-02 |
|
|
NTDS015N15MCT4G |
150V,15mΩ,50A,N沟道功率MOSFET |
2020-11-25 |
|
|
NVBG080N120SC1 |
1200V,80mΩ,300A,N沟道碳化硅MOSFET |
2020-11-25 |
|
|
NTPF360N80S3Z |
800V,360mΩ,13A,N沟道功率MOSFET |
2020-11-11 |
|
|
NVMFS3D6N10MCLT1G |
100V,3.6mΩ,132A,N沟道功率MOSFET |
2020-11-11 |
|
|
NTMFS011N15MC |
150V,11.5mΩ,35A单N沟道功率MOSFET |
2020-11-11 |
|
|
NTMFS3D6N10MCLT1G |
100V,3.6mΩ,131A,N沟道功率MOSFET |
2020-10-22 |
|
|
NTD360N80S3Z |
800V,360mΩ,13A,N沟道功率MOSFET |
2020-10-22 |
|
|
NTMFS015N10MCLT1G |
100V,12.2mΩ,54A,单N沟道功率MOSFET |
2020-10-22 |
|
|
NVMFS015N10MCLT1G |
100V,12.2mΩ,47.1A单N沟道功率MOSFET |
2020-10-14 |
|
|
NVHL050N65S3HF |
650V,50mΩ,58A,N沟道功率MOSFET |
2020-10-14 |
|
|
NVBLS4D0N15MC |
150V,4.4mΩ,187A,单N沟道功率MOSFET |
2020-10-14 |
|
|
NVTFS6H860NLTAG |
80V,20mΩ,30A,单N沟道功率MOSFET |
2020-10-14 |
|
|
NTMFS015N15MC |
150V,14mΩ,61A,单N沟道功率MOSFET |
2020-10-14 |
|
|
NTP5D0N15MC |
150V,5mΩ,139A,N沟道功率MOSFET |
2020-09-14 |
|
|
NCV8711ASNADJT1G |
LDO调节器,100mA,18V,带有PG ADJ |
2020-08-31 |
|
|
NCL30486A2DR2G |
智能调光CC/CV PSR控制器线路OVP,1%调光 |
2020-08-31 |
|
|
NTBG080N120SC1 |
1200V,110mΩ,30A,N沟道碳化硅MOSFET |
2020-08-31 |
|
|
NTBLS4D0N15MC |
150V,4.4mΩ,187A,N沟道功率MOSFET |
2020-08-31 |
|
|
NTBS9D0N10MC |
100V,9mΩ,60A,N沟道功率MOSFET |
2020-08-31 |
|
|
NVMFS6H818NLT1G |
80V,3.2mΩ,135A,单N沟道功率MOSFET |
2020-08-17 |
|
|
NVMFS6H864NLT1G |
80V,29mΩ,22A,单N沟道功率MOSFET |
2020-08-17 |
|
|
NVMFD6H846NLT1G |
80V,15mΩ,31A,双N沟道功率MOSFET |
2020-08-17 |
|
|
NTP360N80S3Z |
800V,360mΩ,13A,N沟道功率MOSFET |
2020-08-17 |
|
|
NTTFS1D8N02P1E |
25V,1.3mΩ,150A,单N沟道功率MOSFET |
2020-08-17 |
|
|
NCN5130ASGEVB |
NCN5130 KNX Arduino屏蔽兼容评估板 |
2020-08-10 |
|
|
NVBG160N120SC1 |
1200V,160mΩ,19.5A,N沟道碳化硅MOSFET |
2020-08-10 |
|
|
BC858CMTF |
310mW,PNP外延硅晶体管 |
2020-05-28 |
|
|
ESD7351XV2T1G |
3.3V,150mW,ESD保护二极管 |
2020-05-28 |
|
|
1N4740ATR |
齐纳二极管,10V 1W 5% |
2020-05-28 |
|
|
NLV74HC164ADTR2G |
8位串入并出移位寄存器 |
2020-05-21 |
|
|
NLV9306USG |
双向I2C总线和SMBus电压电平转换器 |
2020-05-21 |
|
|
CAT24C512HU5IGT3 |
512K,I2C串行存储器 |
2020-05-21 |
|
|
CAV24C32YE-GT3 |
32Kb,I2C CMOS串行EEPROM |
2020-05-21 |
|
|
CAV93C76VE-GT3 |
汽车级8Kb微线串行EEPROM |
2020-05-21 |
|
|
NLV74HC14ADTR2G |
施密特触发入六角反相器 |
2020-01-07 |
|
|
NLVHCT244ADTR2G |
八路3态非反相缓冲器 |
2020-01-07 |
|
|
MC100EP52DR2G |
ECL,差分D触发器 |
2020-01-07 |
|
|
MMBT100 |
NPN通用放大器 |
2020-01-07 |
|
|
NTSAF545T3G |
沟槽肖特基整流器,低正向电压,45V,5A |
2020-01-07 |
|
|
NRVHP820MFDT1G |
200V,超快恢复双模整流器 |
2019-12-26 |
|
|
FFSD0465A |
650V,4A,碳化硅肖特基二极管 |
2019-12-26 |
|
|
FFSM0865A |
650V,8A,碳化硅二极管 |
2019-12-26 |
|
|
FFSPF0865A |
650V,8A,碳化硅(SiC)肖特基二极管 |
2019-12-26 |
|
|
FFSPF1065A |
650V,10A,碳化硅肖特基二极管 |
2019-12-26 |
|
|
FDMS3D5N08LC |
80V,136A,3.5mΩ,单N通道功率MOSFET |
2019-12-10 |
|
|
FDPF4D5N10C |
100V, 128A,4.5mΩ,N通道PowerMOSFET |
2019-12-10 |
|
|
FDPF8D5N10C |
100V,76A,8.5mΩ,N沟道屏蔽栅极功率MOSFET |
2019-12-10 |
|
|
NTB110N65S3HF |
650V,30A,110mΩ,N沟道SUPERFET III MOSFET |
2019-12-10 |
|
|
NTTFS5C453NLTWG |
40V,107A,3mΩ,N沟道功率MOSFET |
2019-12-10 |
|
|
SZ1SMA5936BT3G |
30V,1.5W齐纳稳压管 |
2019-12-10 |
|
|
SZMM3Z43VT1G |
300mW,43V,±5%齐纳稳压管 |
2019-12-10 |
|
|
FCPF20N60 |
600V,190mΩ,20A,N通道功率MOSFET |
2019-11-01 |
|
|
MB10S |
0.5A,整流桥 |
2019-11-01 |
|
|
74LVC06ADR2G |
具有漏极开路输出和5V容差低压六路反向器 |
2019-11-01 |
|
|
NSVF5488SKT3G |
用于低噪声放大器的RF晶体管 |
2019-10-10 |
|
|
SZMMSZ5233BT1G |
500mW,齐纳二极管 |
2019-09-19 |
|
|
NRVS3KB |
3A,800V表面贴装整流器 |
2019-09-19 |
|
|
NSVBAS20LT3G |
200V开关二极管 |
2019-09-19 |
|
|
SZSM05T1G |
5V,双路共阳二极管TVS带ESD保护 |
2019-09-19 |
|
|
ESDU3121MXT5G |
12V单向ESD保护器件 |
2019-09-19 |
|
|
ESD8704MUTAG |
单向高速数据线保护 |
2019-09-19 |
|
|
NSVMMUN2233LT3G |
NPN双极数字晶体管(BRT) |
2019-09-19 |
|
|
SZBZX84B5V6LT1G |
225mW,5.6V,±2%齐纳稳压管 |
2019-09-03 |
|
|
SZMMBZ15VAWT1G |
40W,15V,齐纳保护二极管 |
2019-09-03 |
|
|
SZMMSZ27T1G |
500mW,27V,±5%,齐纳稳压管 |
2019-09-03 |
|
|
SZMMSZ4704T1G |
17V低电流齐纳二极管电压稳压器 |
2019-09-03 |
|
|
FGH75T65SQDNL4 |
650V,75A,隔离门双极晶体管(IGBT),场截止型 |
2019-08-16 |
|
|
FFSB1065A |
-650V,10A,碳化硅(SIC)肖特基二极管 |
2019-08-16 |
|
|
FFSB1265A |
-650V,12A,碳化硅肖特基二极管, |
2019-08-16 |
|
|
FFSD0665A |
-650V,6A,碳化硅肖特基二极管 |
2019-08-16 |
|
|
FFSH15120A |
1200V,15A,碳化硅肖特基二极管 |
2019-08-16 |
|
|
FFSH1665A |
-650V,16A,碳化硅肖特基二极管 |
2019-08-16 |
|
|
FQA13N80-F109 |
800V,12.6A,750mΩ,N沟道 QFET MOSFET |
2019-07-22 |
|
|
NTMFS4C024NT1G |
30V,78A,2.8mΩ,N沟道功率MOSFET |
2019-07-22 |
|
|
FCP20N60 |
600V,190mΩ,20A,N通道功率MOSFET |
2019-07-22 |
|
|
FDP4D5N10C |
100V,128A,4.5mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
|
|
FFSP15120A |
1200V,15A,碳化硅肖特基二极管 |
2019-06-14 |
|
|
FCH125N65S3R0-F155 |
650V,24A,125mΩ,N沟道功率MOSFET |
2019-06-14 |
|
|
FCP260N65S3 |
650V,12A,260mΩ,N沟道功率MOSFET |
2019-06-14 |
|
|
FFSH10120ADN-F155 |
共阴极碳化硅(SiC)肖特基二极管,1200V,10A |
2019-05-16 |
|
|
LC823450XDTBG |
低功耗,高分辨率音频处理片上系统(SoC) |
2019-03-28 |
|
|
NCS2252SQ2T2G |
50ns,高速低压,轨到轨,漏极开路比较器 |
2019-03-28 |
|
|
NCP134AMX110TCG |
具有偏置轨和极低压差的LDO稳压器 |
2019-03-28 |
|
|
NCV8605MN18T2G |
1.8V,低压差稳压器带ESD保护 |
2019-03-28 |
|
|
NCV431ASNT1G |
低电压精密可调分流稳压器 |
2019-03-28 |
|
|
FAN7711MX |
镇流器控制集成电路 |
2018-12-27 |
|
|
NB3N2304NZMNR4G |
1:4时钟/数据扇出缓冲器 |
2018-12-14 |
|
|
NCV431BSNT1G |
低电压精密可调分流稳压器 |
2018-11-01 |
|
|
NCP1340B5D1R2G |
具有谷锁定切换功能的高电压准谐振控制器 |
2018-11-01 |
|
|
FFSH20120ADN-F085 |
1200V,20A,碳化硅肖特基二极管 |
2018-11-01 |
|
|
EFC2J013NUZTDG |
12V,17A,5.8mΩ,双N沟道功率MOSFET |
2018-09-21 |
|
|
NRVTSAF345T3G |
45V,3A,沟槽型肖特基功率整流器 |
2018-09-21 |
|
|
FOD8314T |
1.0A 输出电流,栅极驱动光耦合器 |
2018-08-23 |
|
|
NSVMUN5314DW1T3G |
互补双极数字晶体管 |
2018-08-23 |
|
|
NVGS4111PT1G |
单P沟道功率MOSFET,-30V,-4.7A |
2018-08-23 |
|
|
NCP135AMT040TBG |
0.5A,0.4V输出低压差稳压器 |
2018-08-23 |
|
|
FFSP1265A |
650V,12A,碳化硅肖特基二极管 |
2018-08-23 |
|
|
MC74AC86DR2G |
四2输入异或门 |
2018-08-23 |
|
|
NCP114ASN120T1G |
1.2V,300mA,CMOS 低压差稳压器(LDO) |
2018-06-13 |
|
|
SMMBT2369ALT1G |
15V,200mA,NPN双极晶体管 |
2018-06-13 |
|
|
CPH6904-TL-E |
25V,20~40mA,40mS N沟道JFET |
2018-06-13 |
|
|
CAV25320YE-GT3 |
32-Kb SPI串行CMOS EEPROM(汽车级) |
2018-06-13 |
|
|
NCP1239BD100R2G |
用于带HV启动的反激式转换器的固定频率电流模式控制器 |
2018-06-13 |
|
|
2SC6097-TL-E |
60V,3A,NPN低VCE(Sat)晶体管,60V,3A |
2018-06-13 |
|
|
SZMM3Z13VT1G |
300mW,13V,±5%,齐纳稳压二极管 |
2018-05-10 |
|
|
NB100LVEP221MNRG |
2.5V/3.3V,2:1:20差分,HSTL/ECL/PECL,时钟/数据扇出缓冲器 |
2018-05-04 |
|
|
NSR05F30NXT5G |
30V,0.5A肖特基二极管 |
2018-04-28 |
|
|
NSPM1041BMUTBG |
4.8V,125A,ESD保护二极管 |
2018-04-28 |
|
|
NSV1C200MZ4T1G |
100V,2A,PNP型低VCE(sat)晶体管 |
2018-04-28 |
|
|
NCP431BCSNT1G |
基准电压源,低阴极电流,可编程并联稳压器 |
2018-04-28 |
|
|
SZMMSZ5249BT1G |
500mW齐纳二极管 |
2018-04-28 |
|
|
NCV2200SN1T1G |
低电压互补型比较器 |
2018-04-28 |
|
|
NCV303LSN40T1G |
具有可编程延迟N通道输出的电压检测器 |
2018-04-28 |
|
|
NCV8161ASN280T1G |
2.8V输出,450mA超低噪声,高PSRR LDO稳压器 |
2018-03-29 |
|
|
NLV17SZ14DFT2G |
带施密特触发器输入的单路反相器 |
2018-03-29 |
|
|
NCV303LSN45T1G |
4.5V电压检测器带可编程延迟 |
2018-03-29 |
|
|
NCV3066MNTXG |
带ON/OFF功能的高达1.5A,恒流LED开关稳压器 |
2018-03-21 |
|
|
SZMMSZ6V8T1G |
500mW,6.8V,±5%齐纳稳压管 |
2018-02-08 |
|
|
MUN5213DW1T1G |
双偏置电阻晶体管 |
2017-12-15 |
|
|
MMBT2907AM3T5G |
PNP通用型晶体管 |
2017-12-15 |
|
|
NB3V1102CMTTBG |
3.3V/2.5V/1.8V,LVCMOS,低斜率扇出缓冲器 |
2017-12-15 |
|
|
NVLUS4C12NTAG |
30V,9mΩ,10.7A,单N沟道功率MOSFET |
2017-12-15 |
|
|
NTTFS4C02NTAG |
30V,2.25mΩ,170A,单N沟道功率MOSFET |
2017-12-15 |
|
|
NCV2211DR2G |
带差分输出/关断模式的低失真音频功率放大器 |
2017-12-15 |
|
|
MC10EP016FAG |
3.3V/5V,ECL,8位同步二进制加法计数器 |
2017-11-23 |
|
|
NCP114ASN150T1G |
1.5V固定输出,300mA,CMOS低压差稳压器 |
2017-11-09 |
|
|
NB7L585MNR4G |
2.5V / 3.3V 差分2:1输入到1:6 LVPECL时钟/数据输出缓冲器/转换器 |
2017-10-19 |
|
|
MC100EP195BFAG |
3.3V ECL,可编程延迟芯片 |
2017-10-10 |
|
|
LM2901EDR2G |
单电源,36V,四通道,比较器 |
2017-09-28 |
|
|
NLHV4157NDFT2G |
负电压SPDT开关 |
2017-09-28 |
|
|
NCV8720BMT180TBG |
1.8V固定输出,350mA,极低压差LDO稳压器 |
2017-09-28 |
|
|
MC33269DR2-5.0G |
800 mA,输出可调的低压差稳压器 |
2017-09-19 |
|
|
LM358EDR2G |
单电源,双路运算放大器 |
2017-09-05 |
|
|
SBC856BWT1G |
-66V,-100mA,PNP型通用双极晶体管 |
2017-09-05 |
|
|
NLHV4051DTR2G |
8:1,500Ω(Ron),模拟多路复用器/解复用器 |
2017-09-05 |
|
|
NCS2003ASN2T1G |
单路7MHz,高压摆率,轨到轨输出,运算放大器 |
2017-08-17 |
|
|
NCP81234MNTXG |
具有双回路功能,可配置,DrMOS兼容的多相控制器 |
2017-08-17 |
|
|
CAT24C04HU4I-GT3 |
4Kb,I2C串行EEPROM存储器 |
2017-08-11 |
|
|
N24C02UDTG |
2Kb I2C CMOS串行EEPROM |
2017-07-26 |
|
|
NCS20032DTBR2G |
低电压,轨到轨输出,高压摆率,运算放大器 |
2017-07-26 |
|
|
NCV8160AMX180TBG |
用于射频和模拟电路的1.8V固定输出,250mA,低压差稳压器 |
2017-06-02 |
|
|
NCV8161AMX180TBG |
用于射频和模拟电路的1.8V固定输出,450mA,低压差稳压器 |
2017-06-02 |
|
|
NCV8161AMX280TBG |
用于射频和模拟电路的2.8V固定输出,450mA,低压差稳压器 |
2017-06-02 |
|